ELECTRODE WELDING METHOD AND ELECTRODE WELDING APPARATUS

    公开(公告)号:US20220226934A1

    公开(公告)日:2022-07-21

    申请号:US17648329

    申请日:2022-01-19

    申请人: DISCO CORPORATION

    IPC分类号: B23K26/50 H01L23/00

    摘要: An electrode welding method includes a laser irradiation apparatus preparation step of preparing a laser irradiation apparatus including a laser oscillator that emits a laser beam with a wavelength having absorbability with respect to a semiconductor chip and a spatial light modulator that adjusts the energy distribution of the laser beam emitted by the laser oscillator, an electrode positioning step of positioning, corresponding to electrodes of a wiring substrate, bump electrodes of a device, and an electrode welding step of irradiating the back surface of the semiconductor chip with the laser beam and welding the bump electrodes to the electrodes of the wiring substrate.

    Wafer processing method
    92.
    发明授权

    公开(公告)号:US11328956B2

    公开(公告)日:2022-05-10

    申请号:US17066658

    申请日:2020-10-09

    申请人: DISCO CORPORATION

    摘要: A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

    Method for separating thin layers of solid material from a solid body

    公开(公告)号:US11201081B2

    公开(公告)日:2021-12-14

    申请号:US16563442

    申请日:2019-09-06

    申请人: Siltectra GmbH

    摘要: Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

    WAFER PROCESSING METHOD
    95.
    发明申请

    公开(公告)号:US20210125870A1

    公开(公告)日:2021-04-29

    申请号:US17066658

    申请日:2020-10-09

    申请人: DISCO CORPORATION

    摘要: A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

    LASER PROCESSING APPARATUS
    96.
    发明申请

    公开(公告)号:US20210008661A1

    公开(公告)日:2021-01-14

    申请号:US16910655

    申请日:2020-06-24

    申请人: DISCO CORPORATION

    摘要: A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H1 of a modified layer in a wafer that is set by a setting section according to the equation (1) below. Defocus=(thickness T1 of wafer−height value H1−b)/a  (1) The calculating section calculates an appropriate vertical position for the condensing lens according to the equation (1) depending on the height value H1 of the modified layer that is set by the setting section. Therefore, the vertical position of the condensing lens in laser processing operation can be determined more easily, and a time-consuming and tedious experiment for fine adjustment of the vertical position of the condensing lens does not need to be conducted.

    Method for additively manufacturing components

    公开(公告)号:US10730281B2

    公开(公告)日:2020-08-04

    申请号:US15631814

    申请日:2017-06-23

    摘要: An example method of making a component includes providing a digital model of a component to a software program, the software program operable to slice the digital model into digital layers and raster each digital layer into digital segments, the digital segments delineated by digital raster lines. The method further includes depositing a first layer of powdered material onto a platform, compacting the first layer of powered material into a first compacted layer, sintering the first compacted layer along lines corresponding to the digital raster lines using a laser, wherein the laser operates at a first power and a first scan speed, and sintering the first compacted layer along a perimeter of the first compacted layer using the laser to form a first unitary layer, wherein the laser operates at a second power and a second scan speed, wherein the ratio of the first power to the second power is less than about 3. An apparatus for making a component is also disclosed.

    Method for Separating Thin Layers of Solid Material from a Solid Body

    公开(公告)号:US20200006119A1

    公开(公告)日:2020-01-02

    申请号:US16563442

    申请日:2019-09-06

    申请人: Siltectra GmbH

    摘要: Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

    Laser-colored sapphire material
    100.
    发明授权

    公开(公告)号:US10464843B2

    公开(公告)日:2019-11-05

    申请号:US15421466

    申请日:2017-02-01

    申请人: Apple Inc.

    摘要: A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.