公开(公告)号：US20200325575A1

公开(公告)日：2020-10-15

申请号：US16957571

申请日：2018-12-22

申请人： Applied Materials, Inc.

发明人： Peter J. GUERCIO ,  Paul WESTPHAL

IPC分类号： C23C16/32 ,  C23C16/04 ,  C01B32/21

摘要： The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：US10790137B2

公开(公告)日：2020-09-29

申请号：US16549434

申请日：2019-08-23

申请人： ASM IP HOLDING B.V.

发明人： Viljami Pore

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/04 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

公开(公告)号：US20200300470A1

公开(公告)日：2020-09-24

申请号：US16893745

申请日：2020-06-05

申请人： GOODRICH CORPORATION

发明人： YING SHE ,  NAVEEN G. MENON ,  ZISSIS A. DARDAS ,  THOMAS P. FILBURN

IPC分类号： F23R3/00 ,  C04B35/83 ,  C04B35/565 ,  C23C16/44 ,  C23C16/04 ,  C23C16/32

摘要： A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.

公开(公告)号：US10763107B2

公开(公告)日：2020-09-01

申请号：US16740128

申请日：2020-01-10

申请人： Lam Research Corporation

发明人： Bart J. van Schravendijk ,  Akhil Singhal ,  Joseph Hung-chi Wei ,  Bhadri N. Varadarajan ,  Kevin M. McLaughlin ,  Casey Holder ,  Ananda K. Banerji

IPC分类号： H01L21/02 ,  H01L21/56 ,  H01L43/12 ,  C23C16/56 ,  C23C16/34 ,  H01L23/29 ,  C23C16/515 ,  H01L43/08 ,  H01L43/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/32

摘要： Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

公开(公告)号：US10761252B2

公开(公告)日：2020-09-01

申请号：US15978470

申请日：2018-05-14

申请人： Moxtek, Inc.

发明人： Stew Nielson ,  Matt Linford ,  Anubhav Diwan ,  Matthew C. George

IPC分类号： G02B5/30 ,  G02B1/18 ,  G02B1/14 ,  G02B1/04 ,  C23C14/08 ,  C23C14/06 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/32 ,  C09D183/04 ,  C09D5/08 ,  C09D183/02 ,  C09D185/02 ,  C23C16/455 ,  B05D5/08 ,  B05D1/00

摘要： A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R1)d(R2)e(R3)g. In the above WGP and method, X can be a bond to the ribs; each R1 can be a hydrophobic group; each R3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R2 can be a silane-reactive-group; and each R6 can be an alkyl group, an aryl group, or combinations thereof.

公开(公告)号：US20200273697A1

公开(公告)日：2020-08-27

申请号：US16811258

申请日：2020-03-06

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

摘要： Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

公开(公告)号：US20200270749A1

公开(公告)日：2020-08-27

申请号：US16646686

申请日：2018-09-11

申请人： Versum Materials US, LLC

发明人： Ming Li ,  Xinjian Lei ,  Raymond N. Vrtis ,  Robert G. Ridgeway ,  Manchao Xiao

IPC分类号： C23C16/455 ,  C23C16/36 ,  C23C16/32 ,  C23C16/50

摘要： Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.

公开(公告)号：US10731252B2

公开(公告)日：2020-08-04

申请号：US15989697

申请日：2018-05-25

申请人： Rolls-Royce High Temperature Composites Inc.

发明人： Stephen Harris

IPC分类号： C23C16/455 ,  C04B41/85 ,  C04B41/87 ,  C04B41/45 ,  C23C16/32 ,  C23C16/34 ,  C23C16/26

摘要： An apparatus for coating specimens includes a reaction chamber and a plurality of reaction modules in the reaction chamber for containing specimens to be coated, where each reaction module includes a module inlet and a module outlet. A plurality of conduits are configured to be in fluid communication with at least one gas source external to the reaction chamber, and each of the conduits terminates in one of the reaction modules for delivery of gaseous reagents to the specimens to be coated. The module outlets are in fluid communication with the reaction chamber for expulsion of gaseous reaction products from the reaction modules.

公开(公告)号：US20200243302A1

公开(公告)日：2020-07-30

申请号：US16603698

申请日：2019-04-24

申请人： ADMAP INC.

发明人： Shimpei CHIDA

IPC分类号： H01J37/32 ,  C23C16/32

摘要： A SiC member includes: a substrate having a reference hole in a front-back direction; and first and second SiC coats. The first SiC coat has a first hole connected to the reference hole in the front-back direction, a first region extending around the first hole to form its inner circumferential surface, and a second region extending around the first region adjacently to the first region, the second SiC coat has a second hole connected to the first hole in the front-back direction, a third region extending around the second hole to form its inner circumferential surface, and a fourth region extending around the third region adjacently to the third region, the first region has a crystal structure containing crystals grown in a first direction obliquely crossing the front-back direction, and the second, third and fourth regions have crystal structures containing crystals grown in a second direction along the front-back direction.

公开(公告)号：US20200238390A1

公开(公告)日：2020-07-30

申请号：US16849405

申请日：2020-04-15

申请人： P&S Global Holdings LLC

发明人： Wenping Jiang

IPC分类号： B23B27/14 ,  C23C28/00 ,  C23C16/40 ,  C23C16/36 ,  C23C16/34 ,  C23C16/32

摘要： A coating for carbide substrates employs a nanostructured coating in conjunction with a non-nanostructured coating. The nanostructured coating is produced by the addition of a refining agent flow, particular hydrogen chloride gas, during deposition, and may be produced as multiple individual titanium and titanium-based nanostructured layers varying functional materials in a series. The combination of a nanostructured coating and non-nanostructured coating is believed to produce a cutting tool insert that exhibits longer life. Pre-treating the substrate with a mixture of compressed air and abrasive medium prior to coating the substrate and post-treating the coated substrate with a mixture of water and abrasive medium after the coating process is believed to further enhance the wear resistance and usage life of the cutting tool.