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291 条记录 (耗时 0.023 秒)

    Optical to radio frequency detector
    91.
    发明申请
    Optical to radio frequency detector 有权
    光到射频检测器

    公开(公告)号：US20070058977A1

    公开(公告)日：2007-03-15

    申请号：US10504010

    申请日：2003-01-13

    申请人： Patrick Labbe ,  Arianna Filoramo ,  Eric Toussaere ,  Joseph Zyss

    发明人： Patrick Labbe ,  Arianna Filoramo ,  Eric Toussaere ,  Joseph Zyss

    IPC分类号： H04B10/00

    CPC分类号： G02F2/002 ,  G02F1/3534 ,  G02F2201/063 ,  G02F2201/127 ,  G02F2202/022 ,  G02F2202/07 ,  H04B10/2575 ,  H04B10/66

    摘要： An optical to radio frequency detector comprising an optical guide (11 to 14) for receiving two optical signal components having frequencies that differ by an amount corresponding to a radio frequency, and a radio signal guide (15, 16) coupled with an interaction zone (14) of the optical guide for propagating a radio signal from the interaction zone at the radio frequency. the interaction zone (14) of the optical guide comprises an interaction material presenting a second-order non-linear optical polarisation characteristic to the propagatio of the optical signal components, and the radio signal guide (15,16) is in travelling-wave coupling with the interaction zone. the interaction material includes electrically orientated diazobenzene. The radio signal guide (15,16) comprises an electrically conductive strip (15) juxtaposed with and extending along the interaction zone (14) on one side thereof and an electrically conductive ground plane (16) juxtaposed with and extending along the interaction zone (14) on an opposite side thereof.

    摘要翻译： 一种光到射频检测器，包括用于接收具有与射频相对应的频率不同的频率的两个光信号分量的光导（11至14）以及与交互区耦合的无线信号引导（15,16） 14），用于在射频上传播来自相互作用区的无线电信号。 光导体的相互作用区域（14）包括对光信号分量的传播呈现二阶非线性光学偏振特性的相互作用材料，无线电信号引导件（15,16）处于行波耦合 与交互区。 相互作用材料包括电取向的重氮苯。 无线电信号引导器（15,16）包括导电条（15），该导电条（15）在其一侧上与相互作用区（14）并置并延伸，并且导电接地平面（16）并置并沿着相互作用区 14）。

    Electro-optic modulator
    98.
    发明申请
    Electro-optic modulator 有权
    电光调制器

    公开(公告)号：US20050123227A1

    公开(公告)日：2005-06-09

    申请号：US10468938

    申请日：2002-02-22

    申请人： Adrian Vonsovici ,  Ian Day

    发明人： Adrian Vonsovici ,  Ian Day

    IPC分类号： G02F1/025 ,  G02F1/035

    CPC分类号： G02F1/025 ,  G02F2201/063 ,  G02F2202/06 ,  G02F2202/105

    摘要： An electro-optic device includes a semiconducting layer in which is formed a waveguide, a modulator formed across the waveguide comprising a p-doped region to one side and an n-doped region to the other side of the waveguide, wherein at least one of the doped regions extends from the base of a recess formed in the semiconducting layer. In this way, the doped regions can extend further into the semiconducting layer and further hinder escape of charge carriers without the need to increase the diffusion distance of the dopant and incur an additional thermal burden on the device. In an SOI device, the doped region can extend to the insulating layer. Ideally, both the p and n-doped regions extend from the base of a recess, but this may be unnecessary in some designs. Insulating layers can be used to ensure that dopant extends from the base of the recess only, giving a more clearly defined doped region. The (or each) recess can have non-vertical sides, such as are formed by v-groove etches, A combination of a vertical sidewall at the base of the recess and a non-vertical sidewall at the opening could be used.

    摘要翻译： 电光器件包括其中形成波导的半导体层，跨越波导形成的调制器，其包括一侧的p掺杂区域和到该波导的另一侧的n掺杂区域，其中至少一个 掺杂区域从形成在半导体层中的凹部的基底延伸。 以这种方式，掺杂区域可以进一步延伸到半导体层中，并且进一步阻碍电荷载流子的逸出，而不需要增加掺杂剂的扩散距离并且在器件上引起额外的热负担。 在SOI器件中，掺杂区域可以延伸到绝缘层。 理想地，p和n掺杂区都从凹部的底部延伸，但是在一些设计中这可能是不必要的。 可以使用绝缘层来确保掺杂剂仅仅从凹部的底部延伸，给出更清楚地限定的掺杂区域。 （或每个）凹部可以具有非垂直的侧面，例如由v形凹槽蚀刻形成。可以使用在凹部的底部处的垂直侧壁和开口处的非垂直侧壁的组合。

    Machining of lithium niobate by laser ablation
    99.
    发明申请
    Machining of lithium niobate by laser ablation 有权
    通过激光烧蚀加工铌酸锂

    公开(公告)号：US20040252730A1

    公开(公告)日：2004-12-16

    申请号：US10102621

    申请日：2002-03-19

    发明人： Leon McCaughan ,  Chad Matthew Staus

    IPC分类号： H01S003/30

    CPC分类号： G02F1/0305 ,  G02F1/0356 ,  G02F2001/212 ,  G02F2201/063

    摘要： Machining of crystalline lithium niobate is carried out utilizing a laser having a beam with a wavelength near the absorption edge of lithium niobate. The laser beam is provided in pulses of short duration and at a repetition rate selected to ablate the surface of the lithium niobate without damaging the bulk material. Translation of the laser beam and the substrate with respect to each other can be carried out to define a trench of a desired geometry in the lithium niobate.

    摘要翻译： 使用具有波长在铌酸锂的吸收边缘附近的波长的激光来进行结晶铌酸锂的加工。 激光束以短时间的脉冲提供，并且以选择的消除铌酸锂表面的重复率不损坏散装材料。 可以进行激光束和衬底相对于彼此的平移以在铌酸锂中限定所需几何形状的沟槽。

    Method and apparatus for phase-shifting an optical beam in a semiconductor substrate
    100.
    发明申请
    Method and apparatus for phase-shifting an optical beam in a semiconductor substrate 有权

    公开(公告)号：US20030090286A1

    公开(公告)日：2003-05-15

    申请号：US10011216

    申请日：2001-11-15

    发明人： Dean A. Samara-Rubio

    IPC分类号： G01R031/26

    CPC分类号： G02F1/3133 ,  G02F1/025 ,  G02F2201/063

    摘要： A semiconductor-based gain optical phase-shifting device, method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a semiconductor substrate through which an optical beam is to be directed along an optical path through the semiconductor substrate. A plurality of floating charge modulated regions are disposed along the optical path. A phase of the optical beam is responsive to a charge concentration in each of the plurality of floating charge modulated regions. A plurality of tunneling insulation layers are disposed between each of the plurality of floating charge modulated regions and the semiconductor substrate. A plurality of control nodes are disposed proximate to the plurality of floating charge modulated regions. Each of the control nodes control the charge concentration in a respective one of the plurality of floating charge modulated regions. A plurality of blocking insulation layers disposed between each of the plurality of control nodes and the plurality of floating charge modulated regions.