公开(公告)号：US11114612B2

公开(公告)日：2021-09-07

申请号：US16708389

申请日：2019-12-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Shih-Wei Su ,  Ting-An Chien

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32 ,  H01F41/34 ,  H01L43/10

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, part of the MTJ stack is removed, a first cap layer is formed on a sidewall of the MTJ stack, and the first cap layer and the MTJ stack are removed to form a first MTJ and a second MTJ.

公开(公告)号：US20210143324A1

公开(公告)日：2021-05-13

申请号：US16708389

申请日：2019-12-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Shih-Wei Su ,  Ting-An Chien

IPC: H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01F41/34 ,  H01L27/22 ,  H01F10/32

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, part of the MTJ stack is removed, a first cap layer is formed on a sidewall of the MTJ stack, and the first cap layer and the MTJ stack are removed to form a first MTJ and a second MTJ.

公开(公告)号：US20200227354A1

公开(公告)日：2020-07-16

申请号：US16833713

申请日：2020-03-30

Applicant: United Microelectronics Corp.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  San-Fu Lin

IPC: H01L23/532 ,  H01L21/764 ,  H01L21/768 ,  H01L23/528

Abstract: A structure of semiconductor device includes a substrate, having a dielectric layer on top. At least two metal elements are formed in the dielectric layer, wherein an air gap is between adjacent two of the metal elements. A cap layer is disposed over the substrate, wherein a portion of the cap layer above the adjacent two of the metal elements has a hydrophilic surface. An inter-layer dielectric layer is disposed on the cap layer. The inter-layer dielectric layer seals the air gap between the two metal elements. The air gap remains and extends higher than a top surface of the metal elements.

公开(公告)号：US20200185264A1

公开(公告)日：2020-06-11

申请号：US16212362

申请日：2018-12-06

Applicant: United Microelectronics Corp.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Chich-Neng Chang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.