Low temperature sintered ceramic capacitor with a temperature
compensating capability, and method of manufacture
    91.
    发明授权
    Low temperature sintered ceramic capacitor with a temperature compensating capability, and method of manufacture 失效
    具有温度补偿能力的低温烧结陶瓷电容器及其制造方法

    公开(公告)号:US4700264A

    公开(公告)日:1987-10-13

    申请号:US934671

    申请日:1986-11-25

    摘要: A temperature compensating capacitor of monolithic or multilayered configuration comprising a dielectric ceramic body and at least two electrodes buried therein. The ceramic body is composed of a major ingredient expressed by the formula, (SrO).sub.k .multidot.(Zr.sub.1-x Ti.sub.x)O.sub.2, where k and x are numerals in the ranges of 0.8 to 1.3 inclusive and of zero to 0.25 inclusive, respectively. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide, and one or more metal oxides selected from among barium oxide, magnesium oxide, zinc oxide, strontium oxide and calcium oxide. For the fabrication of capacitors the mixture of the above major ingredient and additives in finely divided form are formed into moldings of desired shape and size, each with at least two electrodes buried therein. The moldings and electrodes are cosintered in a reductive or neutral atmosphere and then are reheated at a lower temperature in an oxidative atmosphere. The cosintering temperature can be so low that nickel or like base metal can be employed as the electrode material.

    摘要翻译: 一种单片或多层结构的温度补偿电容器,包括介电陶瓷体和埋在其中的至少两个电极。 陶瓷体由以下式(SrO)kx(Zr1-xTix)O2表示的主要成分组成,其中k和x分别为0.8至1.3的数值和包括0至0.25的数字。 添加少量的氧化硼,二氧化硅和一种或多种选自氧化钡,氧化镁,氧化锌,氧化锶和氧化钙的金属氧化物的混合物。 为了制造电容器,将上述主要成分和细分散形式的添加剂的混合物形成为所需形状和尺寸的模制品,其中至少埋设有两个电极。 模制品和电极在还原或中性气氛中共烧结,然后在较低温度下在氧化气氛中再加热。 整个烧结温度可以低到可以使用镍或类似的贱金属作为电极材料。

    Low temperature sintered ceramic capacitor with high DC breakdown
voltage, and method of manufacture
    92.
    发明授权
    Low temperature sintered ceramic capacitor with high DC breakdown voltage, and method of manufacture 失效
    具有高直流击穿电压的低温烧结陶瓷电容器及其制造方法

    公开(公告)号:US4607316A

    公开(公告)日:1986-08-19

    申请号:US805094

    申请日:1985-12-04

    CPC分类号: H01G4/1245 C04B35/4682

    摘要: A monolithic ceramic capacitor having a higher DC breakdown voltage per unit thickness of the dielectric ceramic body than heretofore. The major ingredient of the ceramic is expressed as {(Ba.sub.1-x-y Ca.sub.x Sr.sub.y)O}.sub.k (Ti.sub.1-z Zr.sub.z)O.sub.2, where x, y, z and k are numerals in the ranges specified herein. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide, and lithium oxide. The relative proportions of these additives are also specified. For the fabrication of capacitors having dielectric bodies of the above composition, the moldings of the mixture of the major ingredient and additives in the specified proportions are sintered to maturity in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (1000.degree.-1200.degree. C.) that the moldings can be cosintered with base metal electrodes buried therein.

    摘要翻译: 一种单片陶瓷电容器,其电介质陶瓷体的单位厚度的直流击穿电压高于迄今为止。 陶瓷的主要成分表示为{(Ba1-x-yCaxSry)O} k(Ti1-zZrz)O2,其中x,y,z和k是本文所指定范围内的数字。 向该主要成分添加少量的氧化硼,二氧化硅和氧化锂的混合物。 还规定了这些添加剂的相对比例。 为了制造具有上述组成的电介质体的电容器,将主要成分和特定比例的添加剂的混合物的模制品在还原性或中性气氛中烧结成熟,然后在较低温度下在氧化气氛中再加热。 烧结温度可以如此低(1000°-1200℃),模制品可以与埋在其中的贱金属电极共烧结。

    Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same
    93.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same 有权
    用于拉硅单晶的玻璃状硅石坩埚及其制造方法

    公开(公告)号:US09328009B2

    公开(公告)日:2016-05-03

    申请号:US13106993

    申请日:2011-05-13

    摘要: Provided is a vitreous silica crucible for pulling a silicon single crystal, which stably suppresses surface vibration of a silicon melted solution filled therein and has a long life, and a method for manufacturing the same. The vitreous silica crucible for pulling a silicon single crystal includes a peripheral wall portion, a curved portion, and a bottom portion, wherein a plurality of minute concave portions are formed on a certain area of an inner surface of the peripheral wall portion, and a plurality of bubbles are formed on a lower position of the minute concave portions.

    摘要翻译: 本发明提供一种用于拉伸硅单晶的玻璃状石英坩埚,其能够稳定地抑制填充在其中的硅熔融溶液的表面振动并且具有长寿命及其制造方法。 用于拉出硅单晶的玻璃状石英坩埚包括周壁部分,弯曲部分和底部部分,其中在周壁部分的内表面的特定区域上形成有多个微小凹部, 在微小凹部的下部位置形成有多个气泡。

    Vitreous silica crucible
    95.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号:US09243343B2

    公开(公告)日:2016-01-26

    申请号:US13166165

    申请日:2011-06-22

    IPC分类号: C30B15/10 C30B29/06 C30B35/00

    摘要: The present invention provides a vitreous silica crucible which can restrain deterioration of crystallinity of a silicon ingot in multi-pulling. Provided is a vitreous silica crucible for pulling a silicon single crystal, the crucible has a wall having, from an inner surface toward an outer surface of the crucible, a synthetic vitreous silica layer, a natural vitreous silica layer, an impurity-containing vitreous silica layer and a natural vitreous silica layer.

    摘要翻译: 本发明提供一种能够抑制多晶硅锭的结晶性劣化的石英玻璃坩埚。 本发明提供一种用于拉制硅单晶的玻璃状石英坩埚,坩埚具有从坩埚的内表面朝向外表面的合成玻璃状二氧化硅层,天然氧化硅玻璃层,含杂质的玻璃态二氧化硅 层和天然玻璃质二氧化硅层。

    Method of evaluating silica powder, vitreous silica crucible, and method of manufacturing vitreous silica crucible
    96.
    发明授权
    Method of evaluating silica powder, vitreous silica crucible, and method of manufacturing vitreous silica crucible 有权
    二氧化硅粉末,石英玻璃坩埚的评价方法,石英玻璃坩埚的制造方法

    公开(公告)号:US09187359B2

    公开(公告)日:2015-11-17

    申请号:US13197408

    申请日:2011-08-03

    IPC分类号: C30B35/00 C03C1/02 C03B19/09

    摘要: The present invention provides a method of evaluating silica powder which, enables precise prediction of easiness of crystallization of a vitreous silica crucible. According to the present invention, provided is a method of evaluating silica powder including a sample preparation process for preparing a vitrified sample by fusing silica powder at a fusing temperature of 1700 to 1900 deg. C., followed by cooling; a sample heat treatment process for retaining the sample for 30 minutes or more at a temperature of 1400 to 1750 deg. C., followed by cooling; and a sample evaluation process for evaluating a state of opacification of the sample after the sample heat treatment process.

    摘要翻译: 本发明提供二氧化硅粉末的评价方法,其能够精确地预测石英玻璃坩埚的结晶容易度。 根据本发明,提供一种评价二氧化硅粉末的方法,其包括在1700〜1900℃的熔融温度下熔融二氧化硅粉末制备玻璃化样品的样品制备方法。 C.然后冷却; 在1400〜1750℃的温度下将样品保持30分钟以上的样品热处理工序。 C.然后冷却; 以及用于评价样品热处理后的样品的不透明状态的样品评价方法。

    Vitreous silica crucible having transparent layer, bubble-containing layer, and semi-transparent layer in its wall, method of manufacturing the same, and method of manufacturing silicon ingot
    97.
    发明授权
    Vitreous silica crucible having transparent layer, bubble-containing layer, and semi-transparent layer in its wall, method of manufacturing the same, and method of manufacturing silicon ingot 有权
    在其壁上具有透明层,含气泡层和半透明层的玻璃状石英坩埚,及其制造方法以及制造硅锭的方法

    公开(公告)号:US09157168B2

    公开(公告)日:2015-10-13

    申请号:US13166189

    申请日:2011-06-22

    摘要: Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.

    摘要翻译: 本发明提供一种玻璃状石英坩埚,即使在硅锭的拉伸时间极长的情况下也能够有效地抑制侧壁的向下的下垂和翘曲。 根据本发明,提供了一种用于拉制硅单晶的石英玻璃坩埚,其中坩埚具有从坩埚的内表面朝向外表面的包含具有气泡含量率的透明玻璃状二氧化硅层的壁 小于0.5%的气泡含量为1%以上且小于50%的含气泡的玻璃状二氧化硅层,气泡含量率为0.5%以上且小于1.0%的半透明玻璃状石英层, OH基浓度为35ppm以上且小于300ppm。

    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same
    98.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same 有权
    用于拉硅单晶的玻璃状硅石坩埚及其制造方法

    公开(公告)号:US08936685B2

    公开(公告)日:2015-01-20

    申请号:US13394284

    申请日:2010-08-20

    摘要: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译: 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚,以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1,第一不透明玻璃状石英部11a的比重为1.4〜1.8,小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽,并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same
    99.
    发明授权
    Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same 有权
    用于拉制单晶硅的玻璃状硅石坩埚及其制造方法

    公开(公告)号:US08871026B2

    公开(公告)日:2014-10-28

    申请号:US12303147

    申请日:2008-09-29

    申请人: Hiroshi Kishi

    发明人: Hiroshi Kishi

    摘要: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.

    摘要翻译: 为了提供即使在高温下使用结晶促进剂也难以变形的石英玻璃坩埚,容易制造,提供了一种用于拉拔单晶硅的玻璃状石英坩埚,其中外表面 层由含气泡的玻璃状二氧化硅层形成,内表面层由气泡对肉眼不可见的玻璃状二氧化硅层形成,外表面层的表面包含未熔融或半熔融的二氧化硅层(缩写为 作为半熔融二氧化硅层),半熔融二氧化硅层的中心线平均粗糙度(Ra)优选为50〜200μm,半熔融二氧化硅层的厚度为0.5〜2.0mm。

    Apparatus and method for manufacturing vitreous silica crucible
    100.
    发明授权
    Apparatus and method for manufacturing vitreous silica crucible 有权
    玻璃石坩埚制造装置及方法

    公开(公告)号:US08844321B2

    公开(公告)日:2014-09-30

    申请号:US12893326

    申请日:2010-09-29

    IPC分类号: C03B19/06 C03B19/09 C03B20/00

    摘要: Provided are an apparatus and a method for manufacturing a vitreous silica crucible, which enable accurate measurement of a fume generation amount, prevention of deterioration of an inner surface property, and real-time control of a raw material melting state. Provided is an apparatus for manufacturing a vitreous silica crucible 50 by supplying silica powder into a mold 10 to form a silica powder layer 11, and heating and melting the silica powder layer 11 by arc discharge. The apparatus includes the mold 10 for defining an outer shape of a vitreous silica crucible, an arc discharge unit having a plurality of carbon electrodes 13 and a power-supply unit 40, and a fume-amount measurement unit 30 for detecting an amount of fumes 80 generated in the mold 10.

    摘要翻译: 提供一种制造石英玻璃坩埚的装置和方法,其能够精确测量烟气产生量,防止内表面性质的劣化,以及原料熔化状态的实时控制。 提供一种通过将二氧化硅粉末供给到模具10中以形成二氧化硅粉末层11并通过电弧放电加热和熔化二氧化硅粉末层11来制造石英玻璃坩埚50的装置。 该装置包括用于限定氧化硅玻璃坩埚的外形的模具10,具有多个碳电极13和电源单元40的电弧放电单元和用于检测烟雾量的烟雾量测量单元30 80在模具10中产生。