公开(公告)号：US08524575B2

公开(公告)日：2013-09-03

申请号：US13338263

申请日：2011-12-28

申请人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

发明人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L21/00 ,  H01L29/20 ,  H01L21/20 ,  H01L21/06

CPC分类号： H01L29/045 ,  C01B21/0632 ,  C01P2002/90 ,  C01P2006/12 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/16 ,  H01L33/32

摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

摘要翻译： 本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有 平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与 并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

公开(公告)号：US20130040442A1

公开(公告)日：2013-02-14

申请号：US13643206

申请日：2011-11-10

申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US20130026497A1

公开(公告)日：2013-01-31

申请号：US13557749

申请日：2012-07-25

申请人： Hiroki INOUE ,  Keiji Ishibashi ,  Shinsuke Fujiwara

发明人： Hiroki INOUE ,  Keiji Ishibashi ,  Shinsuke Fujiwara

IPC分类号： H01L29/38 ,  H01L21/20

CPC分类号： H01L21/02019 ,  H01L21/02013 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

摘要： Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage layer and a second processed damage layer are formed at the first face and second face, respectively. The first face is polished such that at least a portion of the first processed damage layer is removed and the surface roughness of the first face becomes less than or equal to 5 nm. At least a portion of the second processed damage layer is removed while maintaining the surface roughness of the second plane greater than or equal to 10 nm.

摘要翻译： 制备碳化硅单晶。 使用碳化硅单晶作为材料，形成具有位于与第一面相反的一侧的第一面和第二面的碳化硅衬底。 在形成碳化硅衬底时，分别在第一面和第二面上形成第一加工损伤层和第二处理损伤层。 抛光第一面使得第一经处理的损伤层的至少一部分被去除并且第一面的表面粗糙度变得小于或等于5nm。 第二处理的损伤层的至少一部分被去除，同时保持第二平面的表面粗糙度大于或等于10nm。

公开(公告)号：US20120315427A1

公开(公告)日：2012-12-13

申请号：US13473936

申请日：2012-05-17

申请人： Tsutomu HORI ,  Makoto Sasaki ,  Taro Nishiguchi ,  Shinsuke Fujiwara

发明人： Tsutomu HORI ,  Makoto Sasaki ,  Taro Nishiguchi ,  Shinsuke Fujiwara

IPC分类号： C30B29/36 ,  B26D7/27 ,  C30B29/60

CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

摘要： A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.

摘要翻译： 单晶碳化硅基板具有4H型多晶型结构，其氮原子掺杂为原子浓度大于1×1016 / cm3的导电杂质，并且具有包含直径为5cm的圆的主表面 。 单晶碳化硅衬底仅包括小面区域和非面区域中的一个。 因此，能够抑制单晶碳化硅基板的氮原子浓度的变化。

公开(公告)号：US08253162B2

公开(公告)日：2012-08-28

申请号：US12981939

申请日：2010-12-30

申请人： Shinsuke Fujiwara ,  Toshihiro Kotani ,  Fumitake Nakanishi ,  Seiji Nakahata ,  Koji Uematsu

发明人： Shinsuke Fujiwara ,  Toshihiro Kotani ,  Fumitake Nakanishi ,  Seiji Nakahata ,  Koji Uematsu

IPC分类号： H01L33/00

CPC分类号： C30B25/00 ,  C30B29/406 ,  H01L33/32

摘要： The present GaN substrate can have an absorption coefficient not lower than 7 cm−1 for light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cm−1 for at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 Ωcm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm−1. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.

摘要翻译： 对于波长为380nm的光和波长为1500nm的光，对于至少具有波长不为波长的光，吸收系数低于7cm -1，本GaN基板的吸收系数不低于7cm -1 小于500nm且不大于780nm，电阻率不高于0.02＆OHgr; cm。 这里，波长不小于500nm且不大于780nm的光的吸收系数可以低于7cm -1。 因此，提供了具有低于发光器件的发光波长区域内的波长的光的吸收系数低的规定值并且不高于规定值并且适用于发光器件的GaN衬底。

公开(公告)号：US20120074403A1

公开(公告)日：2012-03-29

申请号：US13111595

申请日：2011-05-19

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hideki Osada

IPC分类号： H01L29/20 ,  C30B19/12 ,  C30B19/02 ,  C30B25/20 ,  C30B23/02

CPC分类号： H01L21/0262 ,  C30B23/025 ,  C30B25/18 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254

摘要： The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate 10 having a main surface 10m inclined at an angle of 20° to 90° from a (0001) plane 10c and growing a GaN crystal 20 on the GaN seed crystal substrate 10. The GaN seed crystal substrate 10 and the GaN crystal 20 have a difference in impurity concentration of 3×1018 cm−3 or less.

摘要翻译： 本发明是提供一种GaN晶体生长方法，用于在具有从（0001）面倾斜20°至90°的主表面的GaN晶种衬底上生长具有很少堆垛层错的GaN晶体，并且还提供 具有很少层叠缺陷的GaN晶体衬底。 一种用于生长GaN晶体的方法包括以下步骤：制备具有从（0001）面10c以20°至90°的角度倾斜的主表面10m并在GaN晶种上生长GaN晶体20的GaN晶种衬底10 GaN晶种基板10和GaN晶体20的杂质浓度差为3×1018cm-3以下。

公开(公告)号：US20120056202A1

公开(公告)日：2012-03-08

申请号：US13320247

申请日：2010-04-27

申请人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Keiji Wada ,  Shin Harada ,  Takeyoshi Masuda ,  Misako Honaga ,  Makoto Sasaki ,  Taro Nishiguchi ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×1019 cm−3, and the SiC layer has an impurity concentration greater than 5×1018 cm−3 and smaller than 2×1019 cm−3.

摘要翻译： 一种MOSFET，其是在器件制造工艺中由于热处理而允许抑制堆垛层错而产生降低的导通电阻的半导体器件，包括：碳化硅衬底; 由单晶碳化硅构成的有源层，设置在碳化硅基板的一个主面上; 设置在有源层上的源极接触电极; 以及形成在碳化硅衬底的另一个主表面上的漏电极。 碳化硅基板包括：由碳化硅制成的基层; 以及由单晶碳化硅制成并设置在基底层上的SiC层。 此外，基底层的杂质浓度大于2×1019cm-3，并且SiC层的杂质浓度大于5×1018cm-3且小于2×1019cm-3。

公开(公告)号：USD655256S1

公开(公告)日：2012-03-06

申请号：US29379471

申请日：2010-11-19

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

设计人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

公开(公告)号：US20120031324A1

公开(公告)日：2012-02-09

申请号：US13115560

申请日：2011-05-25

申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

IPC分类号： C30B25/02

CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。

公开(公告)号：US20120012862A1

公开(公告)日：2012-01-19

申请号：US13258801

申请日：2010-09-29

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/187 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 并且通过在基底基板和SiC基板之间形成由导电体的碳制成的中间层，将基底基板与SiC基板相互连接。