公开(公告)号：US20080202914A1

公开(公告)日：2008-08-28

申请号：US12071218

申请日：2008-02-19

Applicant: Arun K. Sharma ,  Theodore Sideropoulos ,  Berne K. Stober ,  Brian D. Albert ,  Alvin U. Chen ,  Vikram Singh

Inventor： Arun K. Sharma ,  Theodore Sideropoulos ,  Berne K. Stober ,  Brian D. Albert ,  Alvin U. Chen ,  Vikram Singh

IPC: B01D3/06 ,  C02F1/00 ,  B01D47/05 ,  B01D47/00

CPC classification number: B01D1/305 ,  B01D3/18 ,  B01D3/20 ,  B01D3/205

Abstract: A de-entrainment device separates entrained liquid from vapor in a fluid stream that flows through a chimney tray in a distillation tower. The separated liquid is collected and shielded from the fluid stream to prevent re-entrainment of the liquid in the vapor flowing upward into the tower. The chimney tray includes risers with hats that have gutters to guide liquid toward the tray deck, channels to collect and drain liquid from the top of the hats to the tray deck, and baffles extending from the risers to shield the liquid collected on the tray deck from the vapor flow.

Abstract translation: 去夹带装置将流过流过蒸馏塔中的烟囱式塔板的流体流中的夹带液体与蒸汽分离。 分离的液体被收集并从流体流屏蔽，以防止液体向上流入塔中的蒸汽再次夹带。 烟囱式托盘包括具有盖子的立管，其具有导槽以将液体引向托盘甲板，通道收集并将液体从帽子的顶部排出到托盘甲板，以及从立管延伸的挡板以屏蔽收集在托盘甲板上的液体 从蒸汽流。

公开(公告)号：US20080169183A1

公开(公告)日：2008-07-17

申请号：US11623739

申请日：2007-01-16

Applicant: Richard J. Hertel ,  You Chia Li ,  Philip J. McGrail ,  Timothy J. Miller ,  Harold M. Persing ,  Vikram Singh

Inventor： Richard J. Hertel ,  You Chia Li ,  Philip J. McGrail ,  Timothy J. Miller ,  Harold M. Persing ,  Vikram Singh

IPC: H05F3/00

CPC classification number: H01J37/32495 ,  H01J37/32412 ,  H01J37/32633

Abstract: A plasma source having a plasma chamber with metal chamber walls contains a process gas. A dielectric window passes a RF signal into the plasma chamber. The RF signal excites and ionizes the process gas, thereby forming a plasma in the plasma chamber. A plasma chamber liner that is positioned inside the plasma chamber provides line-of-site shielding of the inside of the plasma chamber from metal sputtered by ions striking the metal walls of the plasma chamber.

Abstract translation: 具有具有金属室壁的等离子体室的等离子体源包含处理气体。 电介质窗通过RF信号进入等离子体室。 RF信号激发和离子化处理气体，从而在等离子体室中形成等离子体。 位于等离子体室内部的等离子体室衬垫提供了等离子体室内部的离子穿过等离子体室的金属壁溅射的金属的现场屏蔽。

公开(公告)号：US07397048B2

公开(公告)日：2008-07-08

申请号：US11227079

申请日：2005-09-16

Applicant: Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

Inventor： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

IPC: H05H1/42

CPC classification number: H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

Abstract translation: 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

公开(公告)号：US20080160212A1

公开(公告)日：2008-07-03

申请号：US11616314

申请日：2006-12-27

Applicant: Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

Inventor： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

IPC: B28B7/38 ,  C23C16/00

CPC classification number: H01J37/32706 ,  H01J37/32623 ,  H01L21/67011 ,  H01L21/67069 ,  H01L21/68714 ,  H01L21/68735

Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).

Abstract translation: 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。

公开(公告)号：US20070227231A1

公开(公告)日：2007-10-04

申请号：US11678524

申请日：2007-02-23

Applicant: Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

Inventor： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

IPC: G01N27/26 ,  G01N33/00

CPC classification number: H01J37/32422 ,  H01J37/32935

Abstract: A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

Abstract translation: 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US20070210248A1

公开(公告)日：2007-09-13

申请号：US11371907

申请日：2006-03-10

Applicant: Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

Inventor： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC: H01J49/40

CPC classification number: H01J49/40 ,  H01J37/32935

Abstract: An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

Abstract translation: 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

公开(公告)号：US20070170867A1

公开(公告)日：2007-07-26

申请号：US11617785

申请日：2006-12-29

Applicant: Harold M. Persing ,  Vikram Singh ,  Edmund J. Winder

Inventor： Harold M. Persing ,  Vikram Singh ,  Edmund J. Winder

IPC: H01J7/24 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32412

Abstract: A plasma source includes a chamber that contains a process gas. The chamber includes a dielectric window that passes electromagnetic radiation. A RF power supply generates a RF signal. At least one RF antenna with a reduced effective antenna voltage is connected to the RF power supply. The at least one RF antenna is positioned proximate to the dielectric window so that the RF signal electromagnetically couples into the chamber to excite and ionize the process gas, thereby forming a plasma in the chamber.

Abstract translation: 等离子体源包括含有工艺气体的腔室。 该室包括通过电磁辐射的电介质窗。 RF电源产生RF信号。 具有降低的有效天线电压的至少一个RF天线连接到RF电源。 至少一个RF天线被定位成靠近电介质窗口，使得RF信号电磁耦合到室中以激发和离子化工艺气体，从而在腔室中形成等离子体。

公开(公告)号：US07122485B1

公开(公告)日：2006-10-17

申请号：US10316987

申请日：2002-12-09

Applicant: George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

Inventor： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

IPC: H01L21/31

CPC classification number: C23C16/401 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

Abstract: Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

Abstract translation: 公开了通过改变反应性混合物的组成来改变HDP CVD膜的形貌的方法。 该方法允许独立于膜沉积速率的沉积轮廓控制。 它们依赖于HDP CVD系统的工艺化学变化，而不是硬件修改，以修改晶片上的局部沉积速率。 本发明提供了通过改变反应气体混合物的组成，特别是氢含量来改变膜分布的方法。 以这种方式，沉积轮廓和均匀性与沉积速率分离，并且可以在没有硬件修改的情况下被控制。

公开(公告)号：US07067440B1

公开(公告)日：2006-06-27

申请号：US10890655

申请日：2004-07-13

Applicant: Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

Inventor： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

IPC: H01L21/00

CPC classification number: C23C16/401 ,  C23C16/045

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

公开(公告)号：US07001854B1

公开(公告)日：2006-02-21

申请号：US10271333

申请日：2002-10-11

Applicant: George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

Inventor： George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/311

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract translation: 采用化学气相沉积工艺来填补高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小，甚至0.13微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及使用氢和磷掺杂剂前体作为含等离子体CVD反应器的反应混合物中的工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。