Chip package assembly with enhanced interconnects and method for fabricating the same

    公开(公告)号:US11217550B2

    公开(公告)日:2022-01-04

    申请号:US16044363

    申请日:2018-07-24

    Applicant: Xilinx, Inc.

    Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

    PACKAGE INTEGRATION FOR MEMORY DEVICES
    6.
    发明申请

    公开(公告)号:US20200303341A1

    公开(公告)日:2020-09-24

    申请号:US16361617

    申请日:2019-03-22

    Applicant: Xilinx, Inc.

    Abstract: An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

    Package integration for memory devices

    公开(公告)号:US10770430B1

    公开(公告)日:2020-09-08

    申请号:US16361617

    申请日:2019-03-22

    Applicant: Xilinx, Inc.

    Abstract: An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

    HIGH DENSITY SUBSTRATE AND STACKED SILICON PACKAGE ASSEMBLY HAVING THE SAME

    公开(公告)号:US20200161229A1

    公开(公告)日:2020-05-21

    申请号:US16194213

    申请日:2018-11-16

    Applicant: Xilinx, Inc.

    Abstract: An improved interconnect substrate having high density routings for a chip package assembly, a chip package assembly having a high density substrate, and methods for fabricating the same are provided that utilize substrates having a region of high density routings disposed over a region of low density routings. In one example, a method for fabricating an interconnect substrate is provided that includes forming a high density routing region by depositing a seed layer on a top surface of a low density routing region, patterning a mask layer on the seed layer, forming a plurality of conductive posts on the seed layer, removing the mask layer and the seed layer exposed between the conductive posts, and depositing a dielectric layer between the between the conductive posts, wherein at least some of the conductive posts are electrically coupled to conductive routing comprising the low density routing region.

    CHIP PACKAGE ASSEMBLY WITH ENHANCED INTERCONNECTS AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20200035635A1

    公开(公告)日:2020-01-30

    申请号:US16044363

    申请日:2018-07-24

    Applicant: Xilinx, Inc.

    Abstract: An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

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