公开(公告)号：US11387105B2

公开(公告)日：2022-07-12

申请号：US17001382

申请日：2020-08-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20170194443A1

公开(公告)日：2017-07-06

申请号：US15079436

申请日：2016-03-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L29/423 ,  H01L21/308 ,  H01L21/283 ,  H01L21/306

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US09711604B1

公开(公告)日：2017-07-18

申请号：US15079436

申请日：2016-03-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/308 ,  H01L29/423 ,  H01L21/306 ,  H01L21/283

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US11316033B2

公开(公告)日：2022-04-26

申请号：US16900748

申请日：2020-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jin-Dah Chen ,  Stan Chen

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L29/78

摘要： A method includes forming a work function metal layer over first and second semiconductor fins extending upward from a substrate; forming a sacrificial layer straddling the first semiconductor fin but not overlapping the second semiconductor fin; patterning the first work function metal layer using the sacrificial layer, resulting in a patterned work function metal layer under the sacrificial layer, and a work function metal residue in the vicinity of the second semiconductor fin; selectively forming a protective layer on a side surface of the sacrificial layer and a side surface of the patterned first work function metal layer; removing the work function metal residue after selectively forming the protective layer; after removing the work function metal residue, removing the sacrificial layer and the protective layer; and forming a second work function metal layer over the first and second semiconductor fins.

公开(公告)号：US20190252193A1

公开(公告)日：2019-08-15

申请号：US16396429

申请日：2019-04-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/283 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/308

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US10276392B2

公开(公告)日：2019-04-30

申请号：US15642559

申请日：2017-07-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US10755936B2

公开(公告)日：2020-08-25

申请号：US16396429

申请日：2019-04-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L21/306 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

公开(公告)号：US20170309718A1

公开(公告)日：2017-10-26

申请号：US15642559

申请日：2017-07-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jin-Dah Chen ,  Ming-Feng Shieh ,  Han-Wei Wu ,  Yu-Hsien Lin ,  Po-Chun Liu ,  Stan Chen

IPC分类号： H01L29/423 ,  H01L21/308 ,  H01L21/306 ,  H01L21/283

CPC分类号： H01L21/283 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/823456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.