公开(公告)号：US20250022802A1

公开(公告)日：2025-01-16

申请号：US18221638

申请日：2023-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Tzu Pei Chen ,  Sung-Li Wang ,  Shin-Yi Yang ,  Po-Chin Chang ,  Yuting Cheng ,  Chia-Hung Chu ,  Chun-Hung Liao ,  Harry CHIEN ,  Chia-Hao Chang ,  Pinyen LIN

IPC: H01L23/535 ,  H01L21/768

Abstract: An integrated circuit (IC) with conductive structures and a method of fabricating the IC are disclosed. The method includes depositing a first dielectric layer on a semiconductor device, forming a conductive structure in the first dielectric layer, removing a portion of the first dielectric layer to expose a sidewall of the conductive structure, forming a barrier structure surrounding the sidewall of the conductive structure, depositing a conductive layer on the barrier structure, and performing a polishing process on the barrier structure and the conductive layer.

公开(公告)号：US20230411242A1

公开(公告)日：2023-12-21

申请号：US17807476

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kan-Ju LIN ,  Lin-Yu HUANG ,  Min-Hsuan LU ,  Wei-Yip LOH ,  Hong-Mao LEE ,  Harry CHIEN

IPC: H01L23/48 ,  H01L29/417 ,  H01L21/768 ,  H01L29/40

CPC classification number: H01L23/481 ,  H01L29/41733 ,  H01L21/76898 ,  H01L29/401 ,  H01L29/45

Abstract: The present disclosure describes a buried conductive structure in a semiconductor substrate and a method for forming the structure. The structure includes an epitaxial region disposed on a substrate and adjacent to a nanostructured gate layer and a nanostructured channel layer, a first silicide layer disposed within a top portion of the epitaxial region, and a first conductive structure disposed on a top surface of the first silicide layer. The structure further includes a second silicide layer disposed within a bottom portion of the epitaxial region and a second conductive structure disposed on a bottom surface of the second silicide layer and traversing through the substrate, where the second conductive structure includes a first metal layer in contact with the second silicide layer and a second metal layer in contact with the first metal layer.