公开(公告)号：US09786710B2

公开(公告)日：2017-10-10

申请号：US14871409

申请日：2015-09-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Su-Hua Chang ,  Volume Chien ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.

公开(公告)号：US20170257554A1

公开(公告)日：2017-09-07

申请号：US15060604

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H04N5/225 ,  H01L27/146

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US09627426B2

公开(公告)日：2017-04-18

申请号：US14192168

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Volume Chien ,  Yu-Heng Cheng ,  Fu-Tsun Tsai ,  Hsi-Jung Wu ,  Chi-Cherng Jeng

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

公开(公告)号：US09530813B2

公开(公告)日：2016-12-27

申请号：US14166878

申请日：2014-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  I-l Cheng ,  Shiu-Ko Jangjian ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/1464 ,  H01L23/562 ,  H01L27/14623 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Seal ring structures are provided with rounded corner junctions or corner junctions that include polygons. The seal rings surround generally rectangular semiconductor devices such as integrated circuits, image sensors and other devices. The seal ring includes a configuration of two sets of generally parallel opposed sides and the corner junctions are the junctions at which adjacent orthogonal seal ring sides are joined. The seal rings are trench structures or filled trench structures in various embodiments. The rounded corner junctions are formed by a curved arc or multiple line segments joined together at various angles. The corner junctions that include one or more enclosed polygons include polygons with at least one polygon side being formed by one of the seal ring sides.

Abstract translation: 密封环结构设有圆角拐角接头或角接头，包括多边形。 密封环围绕大体上矩形的半导体器件，例如集成电路，图像传感器和其它器件。 密封环包括两组大致平行的相对侧的构造，角接头是相邻的正交密封环侧连接的接合处。 在各种实施例中，密封环是沟槽结构或填充沟槽结构。 圆形的角接头由弯曲的弧形或以各种角度连接在一起的多个线段形成。 包括一个或多个封闭多边形的角接头包括多边形，其中至少一个多边形边由密封环侧之一形成。

公开(公告)号：US20150014802A1

公开(公告)日：2015-01-15

申请号：US13936240

申请日：2013-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Volume Chien ,  I-I Cheng ,  Chi-Cherng Jeng

IPC: F21V8/00 ,  H01L27/146

CPC classification number: H01L27/14685 ,  G02B3/0056 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627

Abstract: A light guide grid can include a grid structure having a plurality of intersecting grid lines, each grid line having a width w, and a plurality of openings for photosensor elements between intersecting grid lines. The grid structure has a diagonal grid width between two adjacent ones of the plurality of openings in a diagonal direction. The diagonal grid width has a value exceeding approximately √3 w. An image sensor can include a light guide grid having a grid structure as described above and further include a micro-lens such as a sinking micro-lens and a color filter. A method of fabricating a light guide grid can include forming a grid above at least one photo sensor, the grid having intersecting grid lines of width w and a diagonal grid width in a diagonal direction having a value exceeding approximately √3 w.

Abstract translation: 光导格栅可以包括具有多个相交网格线的网格结构，每个网格线具有宽度w，以及在相交网格线之间的光电传感元件的多个开口。 栅格结构在对角线方向上具有在多个开口中的两个相邻的开口之间的对角网格宽度。 对角网格宽度的值大于√3w。 图像传感器可以包括具有如上所述的格栅结构的导光栅格，并且还包括诸如下沉微透镜和滤色器的微透镜。 一种制造光导格栅的方法可以包括在至少一个光传感器上形成网格，网格具有宽度为w的交叉网格线和对角线方向上的对角网格宽度，其值超过大约√3w。

公开(公告)号：US11810939B2

公开(公告)日：2023-11-07

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US11336814B2

公开(公告)日：2022-05-17

申请号：US16662047

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/225

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US20200059591A1

公开(公告)日：2020-02-20

申请号：US16662047

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H04N5/225 ,  H01L27/146

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US10276620B2

公开(公告)日：2019-04-30

申请号：US14192258

申请日：2014-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Chuan-Pu Liu

IPC: H01L27/146

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

公开(公告)号：US10269845B2

公开(公告)日：2019-04-23

申请号：US15380764

申请日：2016-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  Shiu-Ko Jangjian ,  Zhe-Ju Liu ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216

Abstract: A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.