公开(公告)号：US20160351685A1

公开(公告)日：2016-12-01

申请号：US15237041

申请日：2016-08-15

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/45 ,  H01L21/306 ,  H01L29/417

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US20190288090A1

公开(公告)日：2019-09-19

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/45 ,  H01L21/283 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US10312095B1

公开(公告)日：2019-06-04

申请号：US16163602

申请日：2018-10-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup Lee ,  Yoshikazu Kondo ,  Pinghai Hao ,  Sameer Pendharkar

IPC: H01L29/205 ,  H01L21/28 ,  H01L29/423 ,  H01L21/02 ,  H01L29/778 ,  H01L29/51 ,  H01L29/66 ,  H01L29/20

Abstract: An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.

公开(公告)号：US20180033865A1

公开(公告)日：2018-02-01

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285 ,  H01L29/45 ,  H01L21/283

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US09443737B2

公开(公告)日：2016-09-13

申请号：US13856016

申请日：2013-04-03

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/3205 ,  H01L21/28 ,  H01L29/778 ,  H01L21/283 ,  H01L21/306 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US20140302673A1

公开(公告)日：2014-10-09

申请号：US13856043

申请日：2013-04-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/306

CPC classification number: H01L21/30621 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462

Abstract: Metal contacts with low contact resistances are formed in a group III-N HEMT by forming metal contact openings in the barrier layer of the group III-N HEMT to have depths that correspond to low contact resistances. The metal contact openings are etched in the barrier layer with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer.

Abstract translation: 通过在III-N型HEMT的势垒层中形成金属接触开口以形成对应于低接触电阻的深度，在III-N型HEMT中形成具有低接触电阻的金属接触。 金属接触开口在阻挡层中被蚀刻，其中第一气体组合蚀刻到阻挡层中，以及第二气体组合，其进一步向下蚀刻到阻挡层中。

公开(公告)号：US09818839B2

公开(公告)日：2017-11-14

申请号：US15237041

申请日：2016-08-15

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/306 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L21/283 ,  H01L29/20 ,  H01L21/285

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US20140302672A1

公开(公告)日：2014-10-09

申请号：US13856016

申请日：2013-04-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/306

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US20230094094A1

公开(公告)日：2023-03-30

申请号：US17491185

申请日：2021-09-30

Applicant: Texas Instruments Incorporated

Inventor： Dong Seup Lee ,  Jungwoo Joh ,  Yoshikazu Kondo

IPC: H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device includes providing a GaN substrate with an epitaxial layer formed thereover, the epitaxial layer forming a heterojunction with the GaN substrate, the heterojunction supporting a 2-dimensional electron gas (2DEG) channel in the GaN substrate. A composite surface passivation layer is formed over a top surface of the epitaxial layer, wherein the composite surface passivation layer comprises a first passivation layer portion formed proximate to a first region of the GaN device and a second passivation layer portion formed proximate to a second region of the GaN device. The first and second passivation layer portions are disposed laterally adjacent to each other over the epitaxial layer, wherein the first passivation layer portion is formed in a first process and the second passivation layer portion is formed in a second process.

公开(公告)号：US10707323B2

公开(公告)日：2020-07-07

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/306 ,  H01L29/417 ,  H01L29/778 ,  H01L29/201 ,  H01L29/66 ,  H01L29/45 ,  H01L29/20

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.