公开(公告)号：US20130244395A1

公开(公告)日：2013-09-19

申请号：US13890321

申请日：2013-05-09

Applicant: SANDISK 3D LLC

Inventor： Steven J. Radigan ,  Usha Raghuram ,  Samuel V. Dunton ,  Michael W. Konevecki

IPC: H01L29/66

CPC classification number: H01L23/5252 ,  H01L27/1021 ,  H01L29/6609 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for forming a monolithic three dimensional memory array. The method includes forming a first memory level above a substrate, and monolithically forming a second memory level above the first memory level. The first memory level is formed by forming first substantially parallel conductors extending in a first direction, forming first pillars above the first conductors, each first pillar including a first conductive layer or layerstack above a vertically oriented diode, the first pillars formed in a single photolithography step, depositing a first dielectric layer above the first pillars, etching first trenches in the first dielectric layer, the first trenches extending in a second direction. After etching, a lowest point in the trenches is above a lowest point of the first conductive layer or layerstack, and the first conductive layer or layerstack does not include a resistivity-switching metal oxide or nitride. Numerous other aspects are provided.

Abstract translation: 提供了一种用于形成单片三维存储器阵列的方法。 该方法包括在衬底上形成第一存储器级，并且在第一存储器级上方单片地形成第二存储器级。 第一存储器级通过形成沿第一方向延伸的第一基本上平行的导体形成，在第一导体上方形成第一柱，每个第一柱包括在垂直取向的二极管上方的第一导电层或层堆叠，第一柱形成于单个光刻 步骤，在第一柱上方沉积第一介电层，蚀刻第一介电层中的第一沟槽，第一沟槽沿第二方向延伸。 在蚀刻之后，沟槽中的最低点高于第一导电层或层堆叠的最低点，并且第一导电层或层堆叠不包括电阻率切换金属氧化物或氮化物。 提供了许多其他方面。

公开(公告)号：US08722518B2

公开(公告)日：2014-05-13

申请号：US13890321

申请日：2013-05-09

Applicant: SanDisk 3D LLC

Inventor： Steven J. Radigan ,  Usha Raghuram ,  Samuel V. Dunton ,  Michael W. Konevecki

IPC: H01L21/326 ,  H01L21/82 ,  H01L21/44 ,  H01L23/525 ,  H01L27/102 ,  H01L29/66

CPC classification number: H01L23/5252 ,  H01L27/1021 ,  H01L29/6609 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for forming a monolithic three dimensional memory array. The method includes forming a first memory level above a substrate, and monolithically forming a second memory level above the first memory level. The first memory level is formed by forming first substantially parallel conductors extending in a first direction, forming first pillars above the first conductors, each first pillar including a first conductive layer or layerstack above a vertically oriented diode, the first pillars formed in a single photolithography step, depositing a first dielectric layer above the first pillars, etching first trenches in the first dielectric layer, the first trenches extending in a second direction. After etching, a lowest point in the trenches is above a lowest point of the first conductive layer or layerstack, and the first conductive layer or layerstack does not include a resistivity-switching metal oxide or nitride. Numerous other aspects are provided.

Abstract translation: 提供了一种用于形成单片三维存储器阵列的方法。 该方法包括在衬底上形成第一存储器级，并且在第一存储器级上方单片地形成第二存储器级。 第一存储器级通过形成沿第一方向延伸的第一基本上平行的导体形成，在第一导体上方形成第一柱，每个第一柱包括在垂直取向的二极管上方的第一导电层或层堆叠，第一柱形成于单个光刻 步骤，在第一柱上方沉积第一介电层，蚀刻第一介电层中的第一沟槽，第一沟槽沿第二方向延伸。 在蚀刻之后，沟槽中的最低点高于第一导电层或层堆叠的最低点，并且第一导电层或层堆叠不包括电阻率切换金属氧化物或氮化物。 提供了许多其他方面。