公开(公告)号：US20140061713A1

公开(公告)日：2014-03-06

申请号：US14075519

申请日：2013-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yung Ho RYU ,  Hae Yeon HWANG ,  Young Chul SHIN

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract translation: 一种半导体发光器件包括：包括第一和第二区域的第一导电半导体层; 设置在所述第二区域上的有源层; 设置在所述有源层上的第二导电半导体层; 分别设置在第一和第二导电半导体层上的第一和第二电极分支; 电连接到所述第一电极分支并设置在所述第一电极分支上的第一电极焊盘; 以及电连接到第二电极分支并设置在第二电极分支上的第二电极焊盘。

公开(公告)号：US20140273318A1

公开(公告)日：2014-09-18

申请号：US14207466

申请日：2014-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yung Ho RYU ,  Jong Hoon LIM ,  Sung Joon KIM ,  Tae Hun KIM ,  Gyeong Seon PARK ,  Myong Soo CHO

IPC: H01L33/00 ,  B23K1/00

CPC classification number: B23K1/0006 ,  B23K1/0016 ,  B23K35/0238 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/262 ,  B23K35/264 ,  B23K35/268 ,  B23K35/282 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/3046 ,  B23K35/32 ,  B23K35/322 ,  B23K2101/40 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method of forming a metal bonding layer includes forming a first bonding metal layer and a second bonding metal layer on surfaces of first and second bonding target objects, respectively. The second bonding target object is disposed on the first bonding target object to allow the first and second bonding metal layers to face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first and second bonding metal layers includes a reaction delaying layer formed of a metal for delaying the reaction between the first and second bonding metal layers.

Abstract translation: 形成金属接合层的方法包括分别在第一和第二接合目标物体的表面上形成第一接合金属层和第二接合金属层。 第二接合目标物体设置在第一接合目标物体上，以允许第一和第二接合金属层彼此面对。 通过第一和第二接合金属层之间的反应形成共晶金属结合层。 第一和第二接合金属层中的至少一个包括由金属形成的反应延迟层，用于延迟第一和第二接合金属层之间的反应。

公开(公告)号：US20140117392A1

公开(公告)日：2014-05-01

申请号：US13948797

申请日：2013-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Yong Il KIM ,  Yung Ho RYU ,  Myeong Rak SON ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG ,  Su Min HWANGBO

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。