公开(公告)号：US20140117392A1

公开(公告)日：2014-05-01

申请号：US13948797

申请日：2013-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Yong Il KIM ,  Yung Ho RYU ,  Myeong Rak SON ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG ,  Su Min HWANGBO

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。