公开(公告)号：US20160359020A1

公开(公告)日：2016-12-08

申请号：US15131611

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin CHOI ,  Dongwoo KIM ,  Chang Woo SOHN ,  Youngmoon CHOI

IPC: H01L29/66 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/3065 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method for manufacturing a semiconductor device includes forming a fin structure extending in a first direction on a substrate, forming a sacrificial gate pattern extending in a second direction to intersect the fin structure, forming a gate spacer layer covering the fin structure and the sacrificial gate pattern, providing a first ion beam having a first incident angle range and a second ion beam having a second incident angle range to the substrate, patterning the gate spacer layer using the first ion beam and the second ion beam to form gate spacers on sidewalls of the sacrificial gate pattern, forming source/drain regions at both sides of the sacrificial gate patterns, and replacing the sacrificial gate pattern with a gate electrode.

Abstract translation: 一种制造半导体器件的方法包括：形成在衬底上沿第一方向延伸的翅片结构，形成沿第二方向延伸以与鳍结构相交的牺牲栅极图案，形成覆盖鳍结构的栅极间隔层和牺牲栅极 提供具有第一入射角范围的第一离子束和具有第二入射角范围的第二离子束到衬底，使用第一离子束和第二离子束来构图栅极间隔层，以在第二离子束的侧壁上形成栅极间隔 牺牲栅极图案，在牺牲栅极图案的两侧形成源极/漏极区域，以及用栅极电极代替牺牲栅极图案。