公开(公告)号：US11614882B2

公开(公告)日：2023-03-28

申请号：US17194588

申请日：2021-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Mun Kang ,  Hyung-Kyun Byun ,  Seon Woo Kim ,  Jin Won Kim ,  Young Joon Jang ,  Jeong-Su Hwang

IPC: G06F3/06 ,  G06F12/02

Abstract: An operating method of a memory controller may include receiving a state analysis request of a memory from a host, determining a fragment state of the memory, determining a lifespan situation of the memory, generating an analysis result indicating whether a garbage collection is restricted, on the basis of the fragment state and the lifespan situation, and providing the analysis results to the host.

公开(公告)号：US11132143B2

公开(公告)日：2021-09-28

申请号：US16577790

申请日：2019-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Joon Jang ,  Chun-Um Kong ,  Ohchul Kwon ,  Junki Kim ,  Hyung-Kyun Byun

IPC: G06F3/06

Abstract: A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.

公开(公告)号：US09671969B2

公开(公告)日：2017-06-06

申请号：US15205578

申请日：2016-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Bo Shim ,  Jae-Sang Yun ,  Doo-Jin Yi ,  Young Joon Jang

IPC: G11C16/06 ,  G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C16/20

CPC classification number: G06F3/0625 ,  G06F3/0655 ,  G06F3/0688 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/20 ,  G11C16/3454 ,  G11C16/3459

Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.

公开(公告)号：US20170060463A1

公开(公告)日：2017-03-02

申请号：US15205578

申请日：2016-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Bo Shim ,  Jae-Sang Yun ,  Doo-Jin Yi ,  Young Joon Jang

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/34 ,  G11C16/04

CPC classification number: G06F3/0625 ,  G06F3/0655 ,  G06F3/0688 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/20 ,  G11C16/3454 ,  G11C16/3459

Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.

Abstract translation: 在数据存储设备中编程固件的方法包括在表面贴装技术应用于非易失性存储器之前使用高于第一参考电压的第一验证电压来预包括多个非易失性存储器的至少一个非易失性存储器中的存储器单元 。