公开(公告)号：US11132143B2

公开(公告)日：2021-09-28

申请号：US16577790

申请日：2019-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Joon Jang ,  Chun-Um Kong ,  Ohchul Kwon ,  Junki Kim ,  Hyung-Kyun Byun

IPC: G06F3/06

Abstract: A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.

公开(公告)号：US10037160B2

公开(公告)日：2018-07-31

申请号：US14965521

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chun-Um Kong ,  Kyu-Hyung Kim ,  Younwon Park

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0631 ,  G06F3/0604 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/1032 ,  G06F2212/7201 ,  G06F2212/7211

Abstract: A storage device includes a nonvolatile memory device including memory blocks divided into a first memory area and a second memory area; and a memory controller. In the case of programming specific attribute data, the memory controller determines a memory area in which the specific attribute data will be programmed according to a wear out ratio of the first memory area and a wear out ratio of the second memory area. The wear out ratio is a ratio of the current maximum erase count of memory blocks of a memory area with respect to the allowable maximum erase count of the memory area.

公开(公告)号：US09460005B2

公开(公告)日：2016-10-04

申请号：US14096491

申请日：2013-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Suk Choi ,  Su-Ryun Lee ,  Chun-Um Kong ,  Youn-Won Park

IPC: G06F12/02 ,  G11C11/56

CPC classification number: G06F12/0246 ,  G11C11/5628 ,  G11C2211/5646 ,  G11C2211/5648

Abstract: Storage devices including a memory device and methods of operating the storage devices are provided. The storage devices may include a controller which is configured to program first bit data and second bit data paired with the first bit data into a memory device. The first bit data may be less significant bit data than the second bit data. The controller may be configured to selectively perform or skip backup of the first bit data when programming the second bit data.

Abstract translation: 提供了包括存储设备的存储设备和操作存储设备的方法。 存储设备可以包括控制器，其被配置为将与第一位数据配对的第一位数据和第二位数据编程到存储器设备中。 第一比特数据可能比第二比特数据低的有效比特数据。 控制器可以被配置为在编程第二位数据时选择性地执行或跳过第一位数据的备份。