公开(公告)号：US11127739B2

公开(公告)日：2021-09-21

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US20180331100A1

公开(公告)日：2018-11-15

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.