公开(公告)号：US11747721B2

公开(公告)日：2023-09-05

申请号：US17154279

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Useong Kim ,  Mincheol Kang ,  Woojoo Sim

IPC: G03F7/20 ,  G06N3/08 ,  G03F1/36 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F7/70308 ,  G03F7/70441 ,  G06N3/08 ,  H01L21/027

Abstract: Provided are a method of forming a mask, the method accurately and quickly restoring an image on the mask to the shape on the mask, and a mask manufacturing method using the method of forming the mask. The method of forming a mask includes obtaining first images by performing rasterization and image correction on shapes on the mask corresponding to first patterns on a wafer, obtaining second images by applying a transformation to the shapes on the mask, performing deep learning based on a transformation relationship between ones of the first images and ones of the second images corresponding to the first images, and forming a target shape on the mask corresponding to a target pattern on the wafer, based on the deep learning. The mask is manufactured based on the target shape on the mask.

公开(公告)号：US20250004361A1

公开(公告)日：2025-01-02

申请号：US18437779

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Cho ,  Hun Kang ,  Sangwook Kim ,  Useong Kim ,  Heungsuk Oh ,  Hee-Jun Lee ,  Jeeeun Jung

IPC: G03F1/36

Abstract: Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.

公开(公告)号：US20240280891A1

公开(公告)日：2024-08-22

申请号：US18111785

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heejun Lee ,  Wooyong Cho ,  Bayram Yenikaya ,  Joobyoung Kim ,  Useong Kim

IPC: G03F1/36 ,  G03F1/84

CPC classification number: G03F1/36 ,  G03F1/84

Abstract: Provided are an optical proximity correction (OPC) method capable of addressing the limitations of patterning and improving the reliability of patterning, and a mask manufacturing method using the OPC method. In the OPC method, a rectangular mask layout for a target pattern is created, the edge of the rectangular mask layout is dissected into segments, a first shape variable point is created, and a second shape variable point is created by shifting the first shape variable point on a rounded target pattern. Thereafter, a curvilinear mask layout is created based on the second shape variable point, a contour is extracted based on the curvilinear mask layout, an edge placement error (EPE) is determined, and the operations are repeated according to a predetermined criterion, thereby realizing a mask layout with minimal EPEs.

公开(公告)号：US12169678B2

公开(公告)日：2024-12-17

申请号：US17510652

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Useong Kim ,  Bayram Yenikaya ,  Mindy Lee ,  Xin Zhou ,  Hee-Jun Lee ,  Woo-Yong Cho

IPC: G06F30/398 ,  G06V10/44 ,  G06V10/88

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

公开(公告)号：US20230176470A1

公开(公告)日：2023-06-08

申请号：US17860139

申请日：2022-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong Cho ,  Useong Kim ,  Heejun Lee

IPC: G03F1/36 ,  G06F30/398 ,  G03F7/20

CPC classification number: G03F1/36 ,  G06F30/398 ,  G03F7/70441

Abstract: Disclosed is a method of generating a curvilinear sub-resolution assist feature (SRAF) capable of easily generating a curvilinear SRAF satisfying mask rule check (MRC) conditions, an MRC verification method for easy MRC verification of the curvilinear SRAF, and a mask manufacturing method including the method of generating the same. The method of generating a curvilinear SRAF includes generating a curve axis for generating the curvilinear SRAF corresponding to a main feature, generating curve points on a line of the curve axis, and generating the curvilinear SRAF based on the curve points.