公开(公告)号：US20250004361A1

公开(公告)日：2025-01-02

申请号：US18437779

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Cho ,  Hun Kang ,  Sangwook Kim ,  Useong Kim ,  Heungsuk Oh ,  Hee-Jun Lee ,  Jeeeun Jung

IPC: G03F1/36

Abstract: Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.

公开(公告)号：US12169678B2

公开(公告)日：2024-12-17

申请号：US17510652

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Useong Kim ,  Bayram Yenikaya ,  Mindy Lee ,  Xin Zhou ,  Hee-Jun Lee ,  Woo-Yong Cho

IPC: G06F30/398 ,  G06V10/44 ,  G06V10/88

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

公开(公告)号：US11294290B2

公开(公告)日：2022-04-05

申请号：US16911819

申请日：2020-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Yong Cho ,  Sangwook Kim ,  Jaewon Yang

IPC: G03F7/20 ,  H01L21/308 ,  H01L21/027

Abstract: Disclosed are reticle fabrication methods and semiconductor device fabrication methods. The reticle fabrication method includes performing a photolithography process on a test substrate using a first reticle having first patterns, measuring the test substrate to obtain measured images, designing a second reticle having second patterns, redesigning the second reticle based on a margin of the photolithography process, and manufacturing the redesigned second reticle. Redesigning the second reticle includes obtaining sample images from the measured images when the first patterns are the same as the second patterns, obtaining contour images that have contours of sample patterns in the sample images, overlapping the contours to obtain a contour overlay value, and comparing the contour overlay value with a reference value to determine defects of the second patterns.