公开(公告)号：US09583440B2

公开(公告)日：2017-02-28

申请号：US14792979

申请日：2015-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taekjung Kim ,  Myung-Ho Kong ,  Heesook Park ,  Youngwook Park ,  Mansug Kang ,  Seonghwee Cheong

IPC: H01L23/48 ,  H01L23/532 ,  H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L23/528 ,  H01L27/22 ,  H01L49/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417

CPC classification number: H01L23/53266 ,  H01L23/528 ,  H01L23/53271 ,  H01L27/10817 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/228 ,  H01L28/91 ,  H01L29/0642 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor memory device can include a first conductive line crossing over a field isolation region and crossing over an active region of the device, where the first conductive line can include a first conductive pattern being doped, a second conductive pattern, and a metal-silicon-nitride pattern between the first and second conductive patterns and can be configured to provide a contact at a lower boundary of the metal-silicon-nitride pattern with the first conductive pattern and configured to provide a diffusion barrier at an upper boundary of the metal-silicon-nitride pattern with the second conductive pattern.

Abstract translation: 半导体存储器件可以包括在场隔离区域上交叉并穿过器件的有源区的第一导线，其中第一导线可以包括被掺杂的第一导电图案，第二导电图案和金属硅 在第一和第二导电图案之间的氮化物图案，并且可以被配置为在金属 - 氮化硅图案的下边界处提供与第一导电图案的接触，并且被配置为在金属 - 氮化硅图案的上边界处提供扩散阻挡层， 具有第二导电图案的氮化硅图案。

公开(公告)号：US20240268138A1

公开(公告)日：2024-08-08

申请号：US18390268

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghun Lee ,  Taekjung Kim ,  Hyungjun Kim ,  Banglin Lee ,  Shingo ISHIHARA ,  Yong Joo Lee ,  Yasushi KOISHIKAWA ,  Youngki Hong

IPC: H10K50/12 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18

CPC classification number: H10K50/12 ,  H10K50/15 ,  H10K50/16 ,  H10K50/171 ,  H10K50/181 ,  H10K2101/10

Abstract: A light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer arranged between the first electrode and the second electrode, the interlayer includes a first emission layer and a second emission layer, the first emission layer includes a first host and a first dopant capable of emitting a first light, the first host includes m1 hosts, m1 is an integer of 1 or more, and when m1 is 2 or more, two or more hosts are present in the first emission layer and are different from the other, the second emission layer includes a second host and a second dopant capable of emitting a second light, the second host includes m2 hosts, m2 is an integer of 1 or more, and when m2 is 2 or more, two or more hosts are present in the second emission layer and are different from the other, the first dopant includes a first transition metal, the second dopant includes a second transition metal different from the first transition metal, and Expression 1 and Expression 2 are satisfied and provided in the present specification.