公开(公告)号：US20200066557A1

公开(公告)日：2020-02-27

申请号：US16385919

申请日：2019-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheonkyu LEE ,  Siqing LU ,  Takafumi NOGUCHI

IPC: H01L21/67 ,  H01L21/683 ,  H05K7/20

Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

公开(公告)号：US20210384012A1

公开(公告)日：2021-12-09

申请号：US17173702

申请日：2021-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyuk CHOI ,  Siqing LU ,  Sangki NAM ,  Keesoo PARK ,  Soonam PARK

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a chamber housing with an upper portion opened, the chamber housing defining a reaction space, a susceptor configured to support a substrate in the chamber housing, and a dielectric cover covering an upper portion of the chamber housing. The dielectric cover includes a dielectric lid, and a mode modifying assembly arranged around the dielectric lid to be spaced apart from the dielectric lid, the mode modifying assembly configured to adjust a distance from the dielectric lid.

公开(公告)号：US20210074558A1

公开(公告)日：2021-03-11

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki NAM ,  Jang-Yeob LEE ,  Sungyeol KIM ,  Sunghyup KIM ,  Soonam PARK ,  Siqing LU

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

公开(公告)号：US20180358262A1

公开(公告)日：2018-12-13

申请号：US15870175

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siqing LU ,  Sang-Hoon AHN ,  Xinglong CHEN ,  Ki-Hyun KIM ,  Kyu-In SHIM

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.

公开(公告)号：US20210151300A1

公开(公告)日：2021-05-20

申请号：US17021166

申请日：2020-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun JUNG ,  Siqing LU ,  Soonam PARK ,  Kyuhee HAN

IPC: H01J37/32

Abstract: A substrate processing apparatus and a method of manufacturing a semiconductor device, the apparatus including a plasma region in which plasma is generated; a processing region in which a substrate is processable; a shower head including a first channel and a second channel, the first channel being a passage through which the plasma flows between the plasma region and the processing region and the second channel being a passage through which a process gas is supplied to the processing region, the first channel and the second channel being separated from each other; a substrate support supporting the substrate in the processing region; and a cooler configured to supply a cooling fluid to a cooling channel of the substrate support.