公开(公告)号：US20200066557A1

公开(公告)日：2020-02-27

申请号：US16385919

申请日：2019-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheonkyu LEE ,  Siqing LU ,  Takafumi NOGUCHI

IPC: H01L21/67 ,  H01L21/683 ,  H05K7/20

Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

公开(公告)号：US20220223384A1

公开(公告)日：2022-07-14

申请号：US17570806

申请日：2022-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naoyuki TAKADA ,  Noriaki IMAI ,  Takafumi NOGUCHI ,  Toshihiro IIZUKA ,  Yoshiaki MORIYA

IPC: H01J37/32 ,  H01L21/683

Abstract: An apparatus for manufacturing a semiconductor device may include a vacuum chamber, an electrostatic chuck (ESC), a cooler, an RF plate, a casing, a base plate and a gas supplier. The ESC may be arranged in the vacuum chamber. The cooler may be configured to cool the ESC. The RF plate may be arranged under the cooler. The casing may be configured to support the cooler. The base plate may be opposite to the RF plate to form an inner space together with the casing. The gas supplier may supply a gas having a low dew point to the inner space. Thus, a generation of the dew condensation at the very low temperature may be prevented so that a damage caused by a short, which may be generated by the dew condensation, may also be prevented.

公开(公告)号：US20220162083A1

公开(公告)日：2022-05-26

申请号：US17528682

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Hwan KIM ,  Takafumi NOGUCHI ,  Toshihiro IIZUKA ,  Kenichi NAGAYAMA

IPC: C01F17/259 ,  H01J37/32 ,  B28B1/26 ,  B28B3/02 ,  B28B11/24

Abstract: A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y5O4F7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.