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    MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD THEREOF
    1.
    发明申请
    MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD THEREOF 有权
    存储器件，存储器系统及其操作方法

    公开(公告)号：US20140362637A1

    公开(公告)日：2014-12-11

    申请号：US14290236

    申请日：2014-05-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eui-chul Jeong ,  Sung-hee Lee ,  Dae-sin Kim ,  Seung-hwan Kim ,  Dae-sun Kim ,  Sua Kim ,  Dong-soo Woo ,  Na-ra Kim

    IPC: G11C11/4074

    CPC classification number: G11C8/08 ,  G11C8/18 ,  G11C11/4085 ,  G11C2029/0411 ,  G11C2207/2227

    Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.

    Abstract translation: 存储器件包括：存储单元阵列，包括彼此相邻的第一和第二字线，连接到第一字线的第一存储器单元和连接到第二字线并位于第一存储器附近的第二存储器单元 细胞; 以及字线电压提供单元，其响应于第一控制信号将第一字线的字线电压从第一字线电压转换到第二字线电压。 转移控制单元产生用于在从第一字线电压到第二字线电压的转变周期中控制第一字线的字线电压的脉冲的第一控制信号，使得来自 与第二字线电压的第一字线电压与从第二字线电压到第一字线电压的转换波形分布不同。

    Memory device, memory system, and operation method thereof
    5.
    发明授权
    Memory device, memory system, and operation method thereof 有权
    存储器件，存储器系统及其操作方法

    公开(公告)号：US09293180B2

    公开(公告)日：2016-03-22

    申请号：US14290236

    申请日：2014-05-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eui-chul Jeong ,  Sung-hee Lee ,  Dae-sin Kim ,  Seung-hwan Kim ,  Dae-sun Kim ,  Sua Kim ,  Dong-soo Woo ,  Na-ra Kim

    IPC: G11C11/4074 ,  G11C8/08 ,  G11C8/18 ,  G11C11/408 ,  G11C29/04

    CPC classification number: G11C8/08 ,  G11C8/18 ,  G11C11/4085 ,  G11C2029/0411 ,  G11C2207/2227

    Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.

    Abstract translation: 存储器件包括：存储单元阵列，包括彼此相邻的第一和第二字线，连接到第一字线的第一存储器单元和连接到第二字线并位于第一存储器附近的第二存储器单元 细胞; 以及字线电压提供单元，其响应于第一控制信号将第一字线的字线电压从第一字线电压转换到第二字线电压。 转移控制单元产生用于在从第一字线电压到第二字线电压的转变周期中控制第一字线的字线电压的脉冲的第一控制信号，使得来自 与第二字线电压的第一字线电压与从第二字线电压到第一字线电压的转换波形分布不同。

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