公开(公告)号：US10401301B2

公开(公告)日：2019-09-03

申请号：US15940011

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun Cho ,  Akinori Okubo ,  Tae Hyun Kim ,  Sangwoo Bae ,  Janghwi Lee

IPC: G01N21/21 ,  G01N21/88 ,  G01N21/95 ,  H01L21/67 ,  H01L21/66

Abstract: An optical test system includes a stage region to accommodate an object to be tested, a first incident optical system which changes a first polarization state of a first light beam to a second polarization state and provide the first light beam in the second polarization state to the stage region in a first direction at a first incident angle which is not a right angle, a second incident optical system which changes a third polarization state of a second light beam to a fourth polarization state and inputs the second light beam in the fourth polarization state to the stage region in a second direction at a second incident angle which is not a right angle, and a main optical system to detect a first reflected light beam reflected from the stage region at a first reflection angle different from the first and second incident.

公开(公告)号：US20240162096A1

公开(公告)日：2024-05-16

申请号：US18416585

申请日：2024-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

IPC: H01L21/66 ,  H01L21/311

CPC classification number: H01L22/12 ,  H01L21/31144

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

公开(公告)号：US20220216039A1

公开(公告)日：2022-07-07

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US12224214B2

公开(公告)日：2025-02-11

申请号：US18416585

申请日：2024-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

IPC: H01L21/66 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

公开(公告)号：US11996270B2

公开(公告)日：2024-05-28

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/67

CPC classification number: H01J37/32238 ,  H01J37/32229 ,  H01J37/32669 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/3266 ,  H01L21/67069

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US11955387B2

公开(公告)日：2024-04-09

申请号：US17386323

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

IPC: H01L21/66 ,  H01L21/311

CPC classification number: H01L22/12 ,  H01L21/31144

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

公开(公告)号：US11581182B2

公开(公告)日：2023-02-14

申请号：US17478619

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun Cho ,  Young Hoo Kim ,  Seung Min Shin ,  Tae Min Earmme ,  Kun Tack Lee ,  Hun Jae Jang ,  Eun Hee Jeang

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.