公开(公告)号：US20240241648A1

公开(公告)日：2024-07-18

申请号：US18370564

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changjun LEE ,  Dayeon KIM ,  Sangwoo KIM ,  Yongjun CHO

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: There is provided a storage device which includes a nonvolatile memory device that includes a first area and a second area, and a controller that receives a first command from an external host device, generates a physical address by performing first error correction decoding on a physical address entry included in the first command, reads first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device. When the first error correction decoding fails, the controller reads first map data from the first area from the nonvolatile memory device, translates a logical address included in the first command into the physical address by using the first map data, reads the first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device.

公开(公告)号：US20150332920A1

公开(公告)日：2015-11-19

申请号：US14657306

申请日：2015-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwoo KIM ,  Kanghyuck LEE ,  Hyejung PARK ,  Eunbi CHO

IPC: H01L21/02 ,  H01L21/324 ,  H01L29/267

CPC classification number: H01L29/267 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/324 ,  H01L29/1606 ,  H01L29/66015 ,  H01L31/028 ,  Y02E10/547

Abstract: Example embodiments relate to an electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the electronic device. The electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer that covers the graphene layer. A side surface of each of the at least one graphene protrusion may be uneven, may have a multi-edge, and may be a stepped side surface. The graphene layer includes a plurality of nanocrystal graphenes. The graphene layer includes a lower graphene layer having a plurality of nanocrystal graphenes and the at least one graphene protrusion that is formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the at least one graphene protrusion may include a plurality of nanocrystal graphenes.

Abstract translation: 示例实施例涉及具有石墨烯 - 半导体多结的电子设备和制造电子设备的方法。 电子器件包括具有至少一个石墨烯突起的石墨烯层和覆盖石墨烯层的半导体层。 所述至少一个石墨烯突起中的每一个的侧表面可以是不均匀的，可以具有多边缘，并且可以是阶梯状侧表面。 石墨烯层包括多个纳米晶体石墨烯。 石墨烯层包括具有多个纳米晶体石墨烯的下部石墨烯层和形成在下部石墨烯层上的至少一个石墨烯突起。 半导体层可以包括过渡金属二硫族元素（TMDC）层。 所述至少一个石墨烯突起中的每一个可以包括多个纳米晶体石墨烯。

公开(公告)号：US20230046595A1

公开(公告)日：2023-02-16

申请号：US17854191

申请日：2022-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seohyun KIM ,  Ohchel KWON ,  Sangwoo KIM ,  Youngchan KIM ,  Hyunchul KIM ,  Hyunwoo NHO ,  Jaeseong RYU ,  Seungbu BAEK ,  Yongmyung JUN ,  Hyeongkwon JEONG ,  Daewoong CHOI

IPC: H01L21/67

Abstract: A supercritical fluid processing apparatus including a supercritical fluid supply module including a gas liquefier to liquefy a gas transferred from a gas supply and provide a liquefied fluid, a storage tank to change the liquefied fluid to a supercritical state and store a supercritical fluid, and an internal pipe connecting the gas liquefier to the storage tank; an exhaust fluid supply module including an exhaust fluid liquefier including a regeneration storage tank to collect a first exhaust fluid from the storage tank, and a refrigerant pipe to liquefy the first exhaust fluid in the regeneration storage tank and maintain the liquefied first exhaust fluid at a predetermined temperature/pressure; a first exhaust pipe to transfer the first exhaust fluid from the storage tank to the exhaust fluid liquefier; and a resupply pipe to resupply the first exhaust fluid collected and liquefied in the exhaust fluid liquefier to the storage tank.

公开(公告)号：US20210074543A1

公开(公告)日：2021-03-11

申请号：US17012661

申请日：2020-09-04

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun KIM ,  Sangwoo KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Ahrum SOHN ,  Jaehwan JUNG

IPC: H01L21/02 ,  H01L29/66 ,  C23C14/34 ,  C23C14/06 ,  C23C14/58

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

公开(公告)号：US20230275128A1

公开(公告)日：2023-08-31

申请号：US18154978

申请日：2023-01-16

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Junyoung KWON ,  Sangwoo KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC: H01L29/18 ,  H01L29/66

CPC classification number: H01L29/18 ,  H01L29/66969

Abstract: A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.

公开(公告)号：US20150333196A1

公开(公告)日：2015-11-19

申请号：US14558384

申请日：2014-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwoo KIM ,  Kyungsik SHIN ,  Hye-Jung PARK ,  Eunbi CHO

IPC: H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/032 ,  H01L31/022408 ,  H01L31/0324 ,  H01L31/04 ,  H01L31/08 ,  Y02E10/50

Abstract: Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

Abstract translation: 示例实施例涉及光电器件。 光电子器件可以包括在第一和第二电极之间的光敏层，以及对应于第一和第二电极中的至少一个的铁电层。 第一和第二电极中的至少一个可以包括石墨烯。 光活性层可以包括二维（2D）半导体。 光电子器件还可以包括第三电极，并且在这种情况下，铁电层可以在第二电极和第三电极之间。 第二电极，铁电体层和第三电极可以构成纳米发生器。

公开(公告)号：US20220254643A1

公开(公告)日：2022-08-11

申请号：US17547626

申请日：2021-12-10

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Sangwoo KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC: H01L21/308 ,  H01J37/34

Abstract: A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.

公开(公告)号：US20220188251A1

公开(公告)日：2022-06-16

申请号：US17410115

申请日：2021-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoo KIM

IPC: G06F13/20 ,  G06F9/50

Abstract: A transaction accelerator may be connected between at least one host device and a bus, and a method of operating the transaction accelerator may include receiving a first transaction request from the at least one host device, transmitting the first transaction request to the bus, and transmitting a first transaction response corresponding to the first transaction request to the at least one host device, in response to the transmitting the first transaction request to the bus.

公开(公告)号：US20180145613A1

公开(公告)日：2018-05-24

申请号：US15810679

申请日：2017-11-13

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Sangwoo KIM ,  Seongsu KIM ,  Jihye KIM

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: A triboelectric generator includes a ferroelectric material layer and a protective layer provided over the ferroelectric material layer including first and second electrodes that are spaced apart from each other, a polarized ferroelectric material layer provided over the first electrode and configured to generate electrical energy by contact with another material, and a protective layer provided over the ferroelectric layer to prevent diffusion of charges generated on the ferroelectric layer.

公开(公告)号：US20160269217A1

公开(公告)日：2016-09-15

申请号：US15025094

申请日：2014-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-Academic Cooperation Foundation Yonsei University

Inventor： Hyungju NAM ,  Sooyong CHOI ,  Chanhong KIM ,  Moonchang CHOI ,  Sangwoo KIM

IPC: H04L27/36 ,  H04L27/26

CPC classification number: H04L27/362 ,  H04L27/2628 ,  H04L27/264 ,  H04L27/34 ,  H04L27/36

Abstract: The present invention relates to a transceiving method and apparatus that enable QAM signal transmission in a filter bank multi-carrier (FMBC) communication system and provides, in particular, a transceiving method and apparatus that enable quadrature amplitude modulation (QAM) signal transmission without intrinsic interference by separating filtering between a sub-carrier having an even index and a sub-carrier having an odd index, and superimposing and transmitting sub-carriers filtered by means of separation. The thus-rendered present invention is a transmission method in the FBMC communication system, the method comprising the steps of: dividing at least two QAM signals into a plurality of groups; performing filtering on each of the plurality of groups; and superimposing and transmitting the QAM signal in the plurality of groups filtered on a time axis. The present invention relates to a transmission method and apparatus, and a corresponding reception method and apparatus.

Abstract translation: 本发明涉及一种在滤波器组多载波（FMBC）通信系统中实现QAM信号传输的收发方法和装置，并且特别提供了一种使得无需内在功能的正交幅度调制（QAM）信号传输的收发方法和装置 通过在具有偶数索引的子载波和具有奇数索引的子载波之间分离滤波的干扰，以及叠加和发送通过分离滤波的子载波。 这样提出的本发明是FBMC通信系统中的传输方法，该方法包括以下步骤：将至少两个QAM信号分成多个组; 对所述多个组中的每一个进行过滤; 并且在时间轴上过滤的多个组中叠加并发送QAM信号。 本发明涉及发送方法和装置，以及相应的接收方法和装置。