公开(公告)号：US20150332920A1

公开(公告)日：2015-11-19

申请号：US14657306

申请日：2015-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwoo KIM ,  Kanghyuck LEE ,  Hyejung PARK ,  Eunbi CHO

IPC: H01L21/02 ,  H01L21/324 ,  H01L29/267

CPC classification number: H01L29/267 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/324 ,  H01L29/1606 ,  H01L29/66015 ,  H01L31/028 ,  Y02E10/547

Abstract: Example embodiments relate to an electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the electronic device. The electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer that covers the graphene layer. A side surface of each of the at least one graphene protrusion may be uneven, may have a multi-edge, and may be a stepped side surface. The graphene layer includes a plurality of nanocrystal graphenes. The graphene layer includes a lower graphene layer having a plurality of nanocrystal graphenes and the at least one graphene protrusion that is formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the at least one graphene protrusion may include a plurality of nanocrystal graphenes.

Abstract translation: 示例实施例涉及具有石墨烯 - 半导体多结的电子设备和制造电子设备的方法。 电子器件包括具有至少一个石墨烯突起的石墨烯层和覆盖石墨烯层的半导体层。 所述至少一个石墨烯突起中的每一个的侧表面可以是不均匀的，可以具有多边缘，并且可以是阶梯状侧表面。 石墨烯层包括多个纳米晶体石墨烯。 石墨烯层包括具有多个纳米晶体石墨烯的下部石墨烯层和形成在下部石墨烯层上的至少一个石墨烯突起。 半导体层可以包括过渡金属二硫族元素（TMDC）层。 所述至少一个石墨烯突起中的每一个可以包括多个纳米晶体石墨烯。