公开(公告)号：US10978552B2

公开(公告)日：2021-04-13

申请号：US16273603

申请日：2019-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho Cho

IPC: H01L49/02 ,  H01L21/285 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US11588012B2

公开(公告)日：2023-02-21

申请号：US17200081

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho Cho

IPC: H01L49/02 ,  H01L21/285 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US20190355806A1

公开(公告)日：2019-11-21

申请号：US16273603

申请日：2019-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho CHO

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/02 ,  H01L27/108 ,  H01L21/321 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US10825893B2

公开(公告)日：2020-11-03

申请号：US16003675

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-ho Cho ,  Sang-yeol Kang ,  Sun-min Moon ,  Young-lim Park ,  Jong-bom Seo

IPC: H01L49/02 ,  H01L21/02 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.