公开(公告)号：US20220191418A1

公开(公告)日：2022-06-16

申请号：US17482563

申请日：2021-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunyong JUNG ,  Minwoong SEO ,  Myunglae CHU

IPC: H04N5/3745 ,  H04N5/378 ,  H04N5/353

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

公开(公告)号：US20210152772A1

公开(公告)日：2021-05-20

申请号：US16996264

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myunglae CHU ,  Sungyong KIM ,  Seoksan KIM ,  Minwoong SEO ,  Jaekyu LEE ,  Jongyeon LEE ,  Junan LEE

IPC: H04N5/3745 ,  H04N5/378

Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

公开(公告)号：US20230039542A1

公开(公告)日：2023-02-09

申请号：US17879497

申请日：2022-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong SEO ,  Hyunyong JUNG ,  Daehee BAE ,  Myunglae CHU

IPC: H04N5/3745 ,  H04N5/369 ,  H04N5/378 ,  H04N5/355 ,  H04N5/353

Abstract: Provided is a pixel array including a plurality of pixels, each of which includes a photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

公开(公告)号：US20220394197A1

公开(公告)日：2022-12-08

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong JUNG ,  Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU

IPC: H04N5/355 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US20240179435A1

公开(公告)日：2024-05-30

申请号：US18432385

申请日：2024-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunyong JUNG ,  Minwoong SEO ,  Myunglae CHU

IPC: H04N25/771 ,  H04N25/53 ,  H04N25/75

CPC classification number: H04N25/771 ,  H04N25/53 ,  H04N25/75

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

公开(公告)号：US20230378204A1

公开(公告)日：2023-11-23

申请号：US18228959

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  Min-Jun CHOI

IPC: H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：US20240040281A1

公开(公告)日：2024-02-01

申请号：US18305909

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggwon LEE ,  Hyunyong JUNG ,  Myunglae CHU ,  Minwoong SEO

IPC: H04N25/77 ,  H04N25/78

CPC classification number: H04N25/77 ,  H04N25/78

Abstract: An image sensor includes a first pixel outputting a first pixel signal, a second pixel outputting a second pixel signal, a ramp signal generator, and a comparator. The first pixel includes first transfer transistor, a first floating diffusion node, and a first gain control transistor. The second pixel includes a second transfer transistor and a second floating diffusion node. The comparator compares the first and second pixel signals. The first pixel operates in an HCG mode to output the first pixel signal as a first HCG pixel signal in a first period and operates in an LCG mode to output the second pixel signal as a first LCG pixel signal in a second period. A reset level of the second floating diffusion node of the second pixel is provided to the comparator through the column line in an interim reset period between the first period and the second period.

公开(公告)号：US20210337155A1

公开(公告)日：2021-10-28

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae CHU ,  Gwideok Ryan LEE ,  Taeyon LEE ,  Jaehoon JEON

IPC: H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.

公开(公告)号：US20210091129A1

公开(公告)日：2021-03-25

申请号：US16882597

申请日：2020-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOKSAN KIM ,  MINWOONG SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  MIN-JUN CHOI

IPC: H01L27/146 ,  H04N5/3745

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.