公开(公告)号：US09129675B2

公开(公告)日：2015-09-08

申请号：US14027337

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ingyu Baek ,  Yeong-Taek Lee ,  KyungMin Kim

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/004

Abstract: Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.

Abstract translation: 提供了电阻式存储器驱动方法。 所述方法可以包括根据操作模式对在多个字线中的所选字线和行延迟周期内的多个位线中的选定位线之间施加设置的工作电压。

公开(公告)号：US20140104923A1

公开(公告)日：2014-04-17

申请号：US14027337

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ingyu BAEK ,  Yeong-Taek Lee ,  KyungMin Kim

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/004

Abstract: Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.

Abstract translation: 提供了电阻式存储器驱动方法。 所述方法可以包括根据操作模式对在多个字线中的所选字线和行延迟周期内的多个位线中的选定位线之间施加设置的工作电压。