Invention Grant
- Patent Title: Resistive memory devices and methods of operating the same
- Patent Title (中): 电阻式存储器件及其操作方法
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Application No.: US14027337Application Date: 2013-09-16
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Publication No.: US09129675B2Publication Date: 2015-09-08
- Inventor: Ingyu Baek , Yeong-Taek Lee , KyungMin Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2012-0113273 20121012
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.
Public/Granted literature
- US20140104923A1 RESISTIVE MEMORY DEVICES AND METHODS OF OPERATING THE SAME Public/Granted day:2014-04-17
Information query
