公开(公告)号：US20240014304A1

公开(公告)日：2024-01-11

申请号：US18170104

申请日：2023-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bin Chun ,  Jin Bum Kim ,  Dong Suk Shin ,  Gyeom Kim ,  Da Hye Kim

IPC: H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/775 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/42392 ,  H01L29/0847

Abstract: A semiconductor device includes a lower pattern on a substrate and protruding in a first direction, a source/drain pattern on the lower pattern and including a semiconductor liner film in contact with the lower pattern, and an epitaxial insulating liner extending along at least a portion of a sidewall of the semiconductor liner film, wherein the epitaxial insulating liner is in contact with the semiconductor liner film, wherein the semiconductor liner film includes a first portion, wherein the first portion of the semiconductor liner film includes a first point spaced apart from the lower pattern at a first height, and a second point spaced apart from the lower pattern at a second height, wherein the second height is greater than the first height, wherein a width of the semiconductor liner film in a second direction at the first point is less than a width of the semiconductor liner film in the second direction at the second point, and wherein the epitaxial insulating liner extends along at least a portion of a sidewall of the first portion of the semiconductor liner film.

公开(公告)号：US20230420519A1

公开(公告)日：2023-12-28

申请号：US18110950

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Da Hye Kim ,  Gyeom Kim ,  Jin Bum Kim ,  Su Jin Jung ,  Kyung Bin Chun

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/02532 ,  H01L29/66545 ,  H01L29/66439

Abstract: A semiconductor device having improved performance and reliability. The semiconductor device may include a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction. A plurality of gate structures may be on the lower pattern and spaced apart in the first direction, and a source/drain pattern, which may include a semiconductor liner film and a semiconductor filling film on the semiconductor liner film. A liner recess that is defined by an inner surface of the semiconductor liner film may include a plurality of width extension regions, and a width of each width extension region in the first direction may increase and then decreases, as a distance increases in the second direction from an upper surface of the lower pattern.