公开(公告)号：US20230420352A1

公开(公告)日：2023-12-28

申请号：US18154261

申请日：2023-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeongbeom KO ,  Junyun KWEON ,  Wooju KIM ,  Heejae NAM ,  Haemin PARK ,  Junggeun SHIN

IPC: H01L23/498 ,  H10B80/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/49833 ,  H10B80/00 ,  H01L24/96 ,  H01L24/97 ,  H01L24/32 ,  H01L24/16 ,  H01L24/73 ,  H01L21/561 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/3135 ,  H01L2924/182 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2224/95001 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L24/48 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/73253

Abstract: A semiconductor package, comprising: a first redistribution structure including a first redistribution via; a first package that is on an upper surface of the first redistribution structure and comprises a first pad; a second redistribution structure that is on a lower surface of the first redistribution structure and comprises a second redistribution via; a second semiconductor chip that is between the first redistribution structure and the second redistribution structure and comprises a connection pad; and a vertical connection structure that is between the first redistribution structure and the second redistribution structure, wherein the vertical connection structure is electrically connected to the first redistribution via and the second redistribution via, the connection pad is electrically connected to the second redistribution via, and the first redistribution via is electrically connected to the first pad.

公开(公告)号：US20220208610A1

公开(公告)日：2022-06-30

申请号：US17699570

申请日：2022-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho YOON ,  Jungchul LEE ,  Byungmoon BAE ,  Junggeun SHIN ,  Hyunsu SIM

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/683 ,  H01L21/304

Abstract: According to an embodiment of inventive concepts, a substrate dicing method may include forming reformed patterns in a substrate using a laser beam, grinding a bottom surface of the substrate to thin the substrate, and expanding the substrate to divide the substrate into a plurality of semiconductor chips. The forming of the reformed patterns may include forming a first reformed pattern in the substrate and providing an edge focused beam to a region crossing the first reformed pattern to form a second reformed pattern in contact with the first reformed pattern.

公开(公告)号：US20210159121A1

公开(公告)日：2021-05-27

申请号：US16909136

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho YOON ,  Jungchul LEE ,  Byungmoon BAE ,  Junggeun SHIN ,  Hyunsu SIM

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683

Abstract: According to an embodiment of inventive concepts, a substrate dicing method may include forming reformed patterns in a substrate using a laser beam, grinding a bottom surface of the substrate to thin the substrate, and expanding the substrate to divide the substrate into a plurality of semiconductor chips. The forming of the reformed patterns may include forming a first reformed pattern in the substrate and providing an edge focused beam to a region crossing the first reformed pattern to form a second reformed pattern in contact with the first reformed pattern.