SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230126003A1

    公开(公告)日:2023-04-27

    申请号:US17858536

    申请日:2022-07-06

    Abstract: A semiconductor package including a lower substrate, a lower semiconductor chip mounted on the lower substrate, a lower mold layer on the lower substrate and enclosing the lower semiconductor chip, a redistribution layer on the lower mold layer, and a vertical connection terminal around the lower semiconductor chip and connecting the lower substrate to the redistribution layer may be provided. The lower semiconductor chip may include a cognition mark at a top surface thereof. The cognition mark may include a marking pattern having an intaglio shape at the top surface of the lower semiconductor chip, and a molding pattern filling an inner space of the marking pattern. A first material constituting the molding pattern may be the same as a second material constituting the lower mold layer.

    CHEMICAL VAPOR DEPOSITION APPARATUS
    5.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS 有权
    化学蒸气沉积装置

    公开(公告)号:US20130098293A1

    公开(公告)日:2013-04-25

    申请号:US13655696

    申请日:2012-10-19

    Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

    Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟,所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道,用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管,其中,所述供给管中的每一个连接到两个以上对应的气体管,并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

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