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公开(公告)号：US11579779B2
公开(公告)日：2023-02-14
申请号：US17405242
申请日：2021-08-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Sungkug Cho , Sang-Hoon Choi
Abstract: Disclosed is a computing system which includes a storage device and a host. The storage device may include a nonvolatile memory, and the host may control the storage device based on a physical address of the nonvolatile memory and may send an asynchronous event request command to the storage device. The storage device may monitor the nonvolatile memory and may send an asynchronous event request corresponding to the asynchronous event request command to the host based on the monitoring result. The asynchronous event request may include requesting another command from the host based on the monitoring result. In some aspects, the host may send an erase command for erasing to erase a selected memory block of the nonvolatile memory to the storage device. In response, the storage device may send an erase pass response or an erase delay violation response to the host in response to the erase command.
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公开(公告)号：US11301388B2
公开(公告)日：2022-04-12
申请号：US16506809
申请日：2019-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hee Ma , Sukhee Lee , Jisoo Kim
IPC: G06F12/0868 , G06F11/10 , G11C29/52
Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.
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公开(公告)号：US20140208002A1
公开(公告)日：2014-07-24
申请号：US13798419
申请日：2013-03-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hee Ma , Da-Woon Jung , Byung-Hei Jun
IPC: G06F12/02
CPC classification number: G11C16/349 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F11/00 , G06F11/1072 , G06F11/2056 , G06F12/0246 , G06F2212/1032 , G11C11/5628
Abstract: A multilevel cell (MLC) nonvolatile memory system including a plurality of memory cells each cell storing first bit data and second bit data, and a controller programming the plurality of memory cells on a page-by-page basis, the controller programming original data to an original block and programming copy data that is the same as the original data to a mirroring block, wherein first bit page data and second bit page data of the original data are programmed to memory cells connected to the same word line, but the first bit page data and second bit page data of the copy data are programmed to memory cells connected to different word lines.
Abstract translation: 一种多级单元（MLC）非易失性存储器系统，包括多个存储单元，每个单元存储第一位数据和第二位数据;以及控制器，在逐页的基础上对所述多个存储器单元进行编程，所述控制器将原始数据编程为 原始块和与原始数据相同的编程复制数据到镜像块，其中原始数据的第一位页数据和第二位页数据被编程到连接到同一字线的存储器单元，但是第一位 复制数据的页数据和第二位页数据被编程到连接到不同字线的存储单元。
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Patent Agency Ranking
公开(公告)号：US11625330B2
公开(公告)日：2023-04-11
申请号：US17688148
申请日：2022-03-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hee Ma , Sukhee Lee , Jisoo Kim
IPC: G06F12/0868 , G06F11/10 , G11C29/52
Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.
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公开(公告)号：US11157180B2
公开(公告)日：2021-10-26
申请号：US16799894
申请日：2020-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Sungkug Cho , Sang-Hoon Choi
Abstract: Disclosed is a computing system which includes a storage device and a host. The storage device may include a nonvolatile memory, and the host may control the storage device based on a physical address of the nonvolatile memory and may send an asynchronous event request command to the storage device. The storage device may monitor the nonvolatile memory and may send an asynchronous event request corresponding to the asynchronous event request command to the host based on the monitoring result. The asynchronous event request may include requesting another command from the host based on the monitoring result. In some aspects, the host may send an erase command for erasing to erase a selected memory block of the nonvolatile memory to the storage device. In response, the storage device may send an erase pass response or an erase delay violation response to the host in response to the erase command.
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公开(公告)号：US12118233B2
公开(公告)日：2024-10-15
申请号：US17864653
申请日：2022-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Duckho Bae , Youngjin Yu
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0688
Abstract: Disclosed is an operation method including generating RAID parity data based on first data in response to an RAID enable request and a first write request, the RAID enable request and the first write request being received from an external host, the RAID enable request including a first stream identifier and a RAID enable indication, and the first write request including the first stream identifier and the first data, storing the first data and the RAID parity data based on the first stream identifier, storing second data based on a second stream identifier in response to receiving a second write request from the external host, the second write request including the second stream identifier and the second data, and receiving an RAID disable request from the external host, the RAID disable request including the first stream identifier and a RAID disable indication.
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公开(公告)号：US10592130B2
公开(公告)日：2020-03-17
申请号：US15605968
申请日：2017-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Sungkug Cho , Sang-Hoon Choi
Abstract: Disclosed is a computing system which includes a storage device and a host. The storage device may include a nonvolatile memory, and the host may control the storage device based on a physical address of the nonvolatile memory and may send an asynchronous event request command to the storage device. The storage device may monitor the nonvolatile memory and may send an asynchronous event request corresponding to the asynchronous event request command to the host based on the monitoring result. The asynchronous event request may include requesting another command from the host based on the monitoring result. In some aspects, the host may send an erase command for erasing to erase a selected memory block of the nonvolatile memory to the storage device. In response, the storage device may send an erase pass response or an erase delay violation response to the host in response to the erase command.
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公开(公告)号：US09318216B2
公开(公告)日：2016-04-19
申请号：US13798419
申请日：2013-03-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hee Ma , Da-Woon Jung , Byung-Hei Jun
CPC classification number: G11C16/349 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F11/00 , G06F11/1072 , G06F11/2056 , G06F12/0246 , G06F2212/1032 , G11C11/5628
Abstract: A multilevel cell (MLC) nonvolatile memory system including a plurality of memory cells each cell storing first bit data and second bit data, and a controller programming the plurality of memory cells on a page-by-page basis, the controller programming original data to an original block and programming copy data that is the same as the original data to a mirroring block, wherein first bit page data and second bit page data of the original data are programmed to memory cells connected to the same word line, but the first bit page data and second bit page data of the copy data are programmed to memory cells connected to different word lines.
Abstract translation: 一种多级单元（MLC）非易失性存储器系统，包括多个存储单元，每个单元存储第一位数据和第二位数据;以及控制器，在逐页的基础上对所述多个存储器单元进行编程，所述控制器将原始数据编程为 原始块和与原始数据相同的编程复制数据到镜像块，其中原始数据的第一位页数据和第二位页数据被编程到连接到同一字线的存储器单元，但是第一位 复制数据的页数据和第二位页数据被编程到连接到不同字线的存储单元。
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