公开(公告)号：US09390977B2

公开(公告)日：2016-07-12

申请号：US14825556

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Jong Han ,  Bon Young Koo ,  Ki Yeon Park ,  Jae Young Park ,  Sun Young Lee ,  Kyung In Choi

IPC: H01L21/8238 ,  H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins.

Abstract translation: 一种用于制造半导体器件的方法包括在衬底中形成限定多个活性鳍片的沟槽，在多个活性鳍片上形成牺牲层，形成牺牲氧化物层，以及去除牺牲氧化物层。 形成牺牲氧化物层包括热处理牺牲层和多个活性鳍片的表面。

公开(公告)号：US11069820B2

公开(公告)日：2021-07-20

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：US10658249B2

公开(公告)日：2020-05-19

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.