公开(公告)号：US12302021B2

公开(公告)日：2025-05-13

申请号：US18305909

申请日：2023-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggwon Lee ,  Hyunyong Jung ,  Myunglae Chu ,  Minwoong Seo

IPC: H04N25/77 ,  H04N25/57 ,  H04N25/59 ,  H04N25/703 ,  H04N25/75 ,  H04N25/78 ,  H10F39/18

Abstract: An image sensor includes a first pixel outputting a first pixel signal, a second pixel outputting a second pixel signal, a ramp signal generator, and a comparator. The first pixel includes first transfer transistor, a first floating diffusion node, and a first gain control transistor. The second pixel includes a second transfer transistor and a second floating diffusion node. The comparator compares the first and second pixel signals. The first pixel operates in an HCG mode to output the first pixel signal as a first HCG pixel signal in a first period and operates in an LCG mode to output the second pixel signal as a first LCG pixel signal in a second period. A reset level of the second floating diffusion node of the second pixel is provided to the comparator through the column line in an interim reset period between the first period and the second period.

公开(公告)号：US12028628B2

公开(公告)日：2024-07-02

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong Jung ,  Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/772

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/772

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US12185004B2

公开(公告)日：2024-12-31

申请号：US18046526

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US11924570B2

公开(公告)日：2024-03-05

申请号：US17482563

申请日：2021-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunyong Jung ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/771 ,  H04N25/53 ,  H04N25/75

CPC classification number: H04N25/771 ,  H04N25/53 ,  H04N25/75

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

公开(公告)号：US12302024B2

公开(公告)日：2025-05-13

申请号：US17535896

申请日：2021-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Myunglae Chu ,  Hyunyong Jung

IPC: H04N25/779 ,  H04N25/772

Abstract: An image sensor device includes a pixel array, including digital pixels, and a pixel driver including a high-speed scanner that generates reset enable signals and signal enable signals. Each of the digital pixels includes a photo detector, a comparator, and a memory circuit. The high-speed scanner includes a first flip-flop and a second flip-flop. The first flip-flop receives a clock signal and a read trigger signal and outputs a first reset enable signal of the reset enable signals. The second flip-flop receives the clock signal and the first reset enable signal and outputs a first signal enable signal of the signal enable signals. The pixel array outputs a reset sampling value stored in the memory circuit in response to the first reset enable signal and outputs a signal sampling value stored in the memory circuit in response to the first signal enable signal.

公开(公告)号：US12143740B2

公开(公告)日：2024-11-12

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N25/75 ,  H03M1/12 ,  H04N25/671 ,  H04N25/77

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

公开(公告)号：US20230156363A1

公开(公告)日：2023-05-18

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H04N5/3745 ,  H04N5/3651

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

公开(公告)号：US20230122582A1

公开(公告)日：2023-04-20

申请号：US18046526

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N5/378 ,  H01L27/30 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.