公开(公告)号：US20170256611A1

公开(公告)日：2017-09-07

申请号：US15336111

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HO-JUN KIM ,  Jong-ho Lee ,  Geum-Jong Bae ,  Dong-Chan Suh

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/16 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0665 ,  H01L29/16 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/785

Abstract: A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.

公开(公告)号：US20210202527A1

公开(公告)日：2021-07-01

申请号：US17199497

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： HO-JUN KIM ,  JAEHYEOUNG MA ,  GEUMJONG BAE

IPC: H01L27/118 ,  H01L21/8238

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.