公开(公告)号：US10418326B2

公开(公告)日：2019-09-17

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.

公开(公告)号：US20180158781A1

公开(公告)日：2018-06-07

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76859 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5283 ,  H01L23/53209

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.