公开(公告)号：US20150031195A1

公开(公告)日：2015-01-29

申请号：US14297734

申请日：2014-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Tae Kim ,  Jihoon Kim ,  Heesook Park ,  Jin Ho Oh ,  Jongmyeong Lee

IPC: H01L29/49 ,  H01L21/28

CPC classification number: H01L21/28088 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66621

Abstract: A method of fabricating a semiconductor device may include conformally forming a gate insulating layer on a substrate having a recess, conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process, and forming a gate electrode on the barrier layer to fill at least a portion of the recess.

Abstract translation: 制造半导体器件的方法可以包括在具有凹部的基板上保形地形成栅极绝缘层，所述栅极绝缘层在基板上使用原子层沉积工艺在栅极绝缘层上保形地形成包含无氟氮化钨的阻挡层，并且形成 在所述阻挡层上的栅电极以填充所述凹部的至少一部分。

公开(公告)号：US10103152B2

公开(公告)日：2018-10-16

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Kim ,  Eun Tae Kim ,  Seong Hun Park ,  Youn Jae Cho ,  Hee Sook Park ,  Woong Hee Sohn ,  Jin Ho Oh

IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/423

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.