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公开(公告)号：US20230060400A1
公开(公告)日：2023-03-02
申请号：US17747303
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号：US20250116332A1
公开(公告)日：2025-04-10
申请号：US18620395
申请日：2024-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihwan Kim , Dongseok Han , Kyung-Sun Kim , Heewon Min , Mingil Kim , Yirop Kim , Junghyun Song , Kuihyun Yoon , Woojin Jang , Seunghee Cho
IPC: F16J15/10 , H01L21/673 , H01L21/683
Abstract: A substrate processing apparatus includes an O-ring defined by a central axis, a first guide ring located closer to the central axis than is the O-ring, and a second guide ring located further from the central axis than is the O-ring. A thickness of each of the first guide ring and the second guide ring becomes progressively greater further from the central axis.
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公开(公告)号：US10818503B2
公开(公告)日：2020-10-27
申请号：US16260816
申请日：2019-01-29
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Cheonkyu Lee , Moonseok Kim , Iksu Byun , Changwoo Song , Seongha Jeong , Dongseok Han
IPC: H01L21/3065 , H01J37/32 , H01L21/311
Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
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4.发明授权公开(公告)号：US12183555B2
公开(公告)日：2024-12-31
申请号：US17981874
申请日：2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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Patent Agency Ranking
公开(公告)号：US20240038505A1
公开(公告)日：2024-02-01
申请号：US18295466
申请日：2023-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghyeon Na , Jaebin Kim , Myeongsoo Shin , Dongseok Han , Kyungsun Kim , Namkyun Kim , Jaesung Kim , Seungbo Shim
CPC classification number: H01J37/3266 , H01J37/20 , H01J37/32532
Abstract: A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.
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6.发明公开公开(公告)号：US20230143049A1
公开(公告)日：2023-05-11
申请号：US17981874
申请日：2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
CPC classification number: H01J37/32642 , H01J37/32532
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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公开(公告)号：US12222362B2
公开(公告)日：2025-02-11
申请号：US17747303
申请日：2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号：US20240379334A1
公开(公告)日：2024-11-14
申请号：US18651124
申请日：2024-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woojin Jang , Wonyoung Jee , Kyungsun Kim , Mingil Kim , Sanghun Bang , Dongseok Han , Changkyu Kwag , Jihwan Kim , Junghyun Song , Kuihyun Yoon
IPC: H01J37/32
Abstract: An example coolant tube block assembly includes a first coolant tube block including at least one of a first coolant flow path tube and a second coolant flow path tube; a hub block configured to expose at least one of the first coolant flow path tube and the second coolant flow path tube on one side, and connected to a lower side of the first coolant tube block; a second coolant tube block including at least one third coolant flow path tube and at least one fourth coolant flow path tube communicating with at least one of the first coolant flow path tube and the second coolant flow path tube, and stacked with the first coolant tube block through the hub block; and a clamp disposed at a lower portion of the second coolant tube block and fastened to a fastening groove formed outside the hub block.
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公开(公告)号：US20190385860A1
公开(公告)日：2019-12-19
申请号：US16260816
申请日：2019-01-29
Applicant: Samsung Electronics CO., LTD
Inventor： CHEONKYU LEE , Moonseok Kim , Iksu Byun , Changwoo Song , Seongha Jeong , Dongseok Han
IPC: H01L21/3065 , H01L21/311 , H01J37/32
Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.
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