公开(公告)号：US20240038820A1

公开(公告)日：2024-02-01

申请号：US18085806

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.

公开(公告)号：US20240234628A1

公开(公告)日：2024-07-11

申请号：US18224255

申请日：2023-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul SHIN ,  Joosung KIM ,  Younghwan PARK ,  Junhee CHOI

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/06 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.

公开(公告)号：US20210399120A1

公开(公告)日：2021-12-23

申请号：US17098896

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu HWANG ,  Joonyong KIM ,  Jongseob KIM ,  Junhyuk PARK ,  Boram KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Soogine CHONG ,  Injun HWANG

IPC: H01L29/778 ,  H01L29/66

Abstract: Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

公开(公告)号：US20210118814A1

公开(公告)日：2021-04-22

申请号：US16868745

申请日：2020-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan PARK ,  Jongseob KIM ,  Joonyong KIM ,  Junhyuk PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Soogine CHONG ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/15

Abstract: A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.

公开(公告)号：US20240038822A1

公开(公告)日：2024-02-01

申请号：US18120862

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Joosung KIM ,  Younghwan PARK ,  Jinjoo PARK ,  Dongchul SHIN

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.

公开(公告)号：US20220310833A1

公开(公告)日：2022-09-29

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul SHIN ,  Boram KIM ,  Younghwan PARK ,  Jongseob KIM ,  Joonyong KIM ,  Junhyuk PARK ,  Jaejoon OH ,  Minchul YU ,  Soogine CHONG ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US20210184010A1

公开(公告)日：2021-06-17

申请号：US17016877

申请日：2020-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soogine CHONG ,  Jongseob KIM ,  Joonyong KIM ,  Younghwan PARK ,  Junhyuk PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/423 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778 ,  H01L21/02 ,  H01L21/285 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

公开(公告)号：US20240072100A1

公开(公告)日：2024-02-29

申请号：US18214736

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.

公开(公告)号：US20240047614A1

公开(公告)日：2024-02-08

申请号：US18118993

申请日：2023-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joosung KIM ,  Younghwan PARK ,  Jinjoo PARK ,  Dongchul SHIN

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/04 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/12 ,  H01L33/04 ,  H01L33/0075

Abstract: A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.

公开(公告)号：US20250056926A1

公开(公告)日：2025-02-13

申请号：US18788990

申请日：2024-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Joosung KIM ,  Dongchul SHIN ,  Junghun PARK

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.