公开(公告)号：US09508644B2

公开(公告)日：2016-11-29

申请号：US14929737

申请日：2015-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-kwon Kim ,  Ki-il Kim ,  Ah-young Cheon ,  Myeong-cheol Kim ,  Yong-jin Kim

IPC: H01L23/00 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L23/48

CPC classification number: H01L23/5283 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/32139 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

公开(公告)号：US10043879B1

公开(公告)日：2018-08-07

申请号：US15660432

申请日：2017-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-jae Kim ,  Ho-young Kim ,  Dong-kwon Kim ,  Jin-hyuk Yoo ,  Woo-jin Jung

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.