公开(公告)号：US10043879B1

公开(公告)日：2018-08-07

申请号：US15660432

申请日：2017-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-jae Kim ,  Ho-young Kim ,  Dong-kwon Kim ,  Jin-hyuk Yoo ,  Woo-jin Jung

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.