公开(公告)号：US20190139980A1

公开(公告)日：2019-05-09

申请号：US16036000

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyoung KIM ,  Moorym CHOI ,  DONGCHAN KIM

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L23/532 ,  G11C16/04 ,  G11C16/34

Abstract: Disclosed are three-dimensional semiconductor memory devices and methods of detecting electrical failure thereof. The three-dimensional semiconductor memory device includes a substrate with a first conductivity including a cell array region and an extension region having different threshold voltages from each other, a stack structure on the substrate and including stacked electrodes, an electrical vertical channel penetrating the stack structure on the cell array region, and a dummy vertical channel penetrating the stack structure on the extension region. The substrate comprises a pocket well having the first conductivity and provided with the stack structure thereon, and a deep well surrounding the pocket well and having a second conductivity opposite to the first conductivity.

公开(公告)号：US20230136919A1

公开(公告)日：2023-05-04

申请号：US17886578

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGCHAN KIM ,  Hwiyoung JEONG

IPC: H01L27/146

Abstract: An image sensor includes: a substrate including an active region and a peripheral region, unit pixels disposed on the active region, device isolation patterns defining the unit pixels disposed on the active region, a light-shield layer on the substrate and having a grid structure defining optical transmission regions, color filters on the light-shield layer, and microlenses on the color filters. The device isolation patterns include first device isolation patterns and a second device isolation pattern, wherein the first device isolation patterns are disposed on a central portion of the active region, and the second device isolation pattern is between the first device isolation patterns and the peripheral region. The first device isolation patterns have a first top surface substantially parallel to a bottom surface of the substrate. The second device isolation pattern has a second top surface, wherein the second top surface approaches the bottom surface of the substrate in a direction toward the peripheral region.

公开(公告)号：US20210130651A1

公开(公告)日：2021-05-06

申请号：US16912426

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNSUNG SEO ,  CHANG GIL KWON ,  SUNG PYO LEE ,  DONGCHAN KIM ,  BO YUN KIM ,  JUN HA HWANG

IPC: C09G1/18 ,  H01L21/321

Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

公开(公告)号：US20200381473A1

公开(公告)日：2020-12-03

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  DONGCHAN KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  HAJIN LIM

IPC: H01L27/146 ,  H01L51/44

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.