公开(公告)号：US20210130651A1

公开(公告)日：2021-05-06

申请号：US16912426

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNSUNG SEO ,  CHANG GIL KWON ,  SUNG PYO LEE ,  DONGCHAN KIM ,  BO YUN KIM ,  JUN HA HWANG

IPC: C09G1/18 ,  H01L21/321

Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.