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    SUBSTRATE PROCESSING METHOD
    1.
    发明公开
    SUBSTRATE PROCESSING METHOD 审中-公开

    公开(公告)号：US20230314956A1

    公开(公告)日：2023-10-05

    申请号：US18125923

    申请日：2023-03-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungkun KANG ,  Chawon KOH ,  Tsunehiro NISHI

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F1/38 ,  H01J37/32

    CPC classification number: G03F7/70033 ,  G03F7/0042 ,  G03F7/0025 ,  G03F7/0046 ,  G03F7/168 ,  G03F1/38 ,  H01J37/32458

    Abstract: A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    2.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权

    公开(公告)号：US20230033040A1

    公开(公告)日：2023-02-02

    申请号：US17678233

    申请日：2022-02-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyunwoong HWANG ,  Chawon KOH ,  Seok HEO ,  Hyunwoo KIM

    IPC: H01L21/67 ,  H01L21/687

    Abstract: A substrate processing apparatus includes a substrate support configured to support and rotate a substrate, at least one first lower cleaning nozzle configured to spray a first cleaning liquid on a lower surface of the substrate, at least one second lower cleaning nozzle configured to spray a second cleaning liquid on the lower surface of the substrate, a bowl assembly disposed around the substrate support, the bowl assembly including a cup body providing an annular shaped accommodating space and inner and outer collection portions sequentially arranged in a radial direction in a lower portion of the cup body, an annular shaped discharge guide plate disposed in the receiving space of the bowl assembly under the substrate and extending outwardly from a circumference of the substrate, and a discharge separation plate provided within the receiving space of the bowl assembly to be movable upward and downward.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230076633A1

    公开(公告)日：2023-03-09

    申请号：US17902142

    申请日：2022-09-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungkun KANG ,  Chawon KOH ,  Hyunjae LEE ,  Tsunehiro NISHI

    IPC: H01L21/027 ,  H01L21/311 ,  H01J37/32 ,  G03F7/004

    Abstract: A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220299874A1

    公开(公告)日：2022-09-22

    申请号：US17696030

    申请日：2022-03-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chawon KOH ,  Tsunehiro NISHI ,  Hyunwoo KIM ,  Jinkyun LEE ,  Junil KIM ,  Hyuntaek OH ,  Jihoon WOO ,  Seungsoo CHOI

    IPC: G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

    Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

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