公开(公告)号：US11462610B2

公开(公告)日：2022-10-04

申请号：US16947090

申请日：2020-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonyoung Choi ,  Byunghyun Lee ,  Byeongjoo Ku ,  Seungjin Kim ,  Sangjae Park ,  Jinwoo Bae ,  Hangeol Lee ,  Bowo Choi ,  Hyunsil Hong

IPC: H01L27/108 ,  H01L49/02

Abstract: Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.

公开(公告)号：US20210151439A1

公开(公告)日：2021-05-20

申请号：US16908833

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONYOUNG CHOI ,  Byunghyun Lee ,  Seungjin Kim ,  Byeongjoo Ku ,  Sangjae Park ,  Hangeol Lee

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.

公开(公告)号：US11616118B2

公开(公告)日：2023-03-28

申请号：US16938286

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjin Kim ,  Sungsoo Yim ,  Suklae Kim ,  Hyukwoo Kwon ,  Byunghyun Lee ,  Yoonyoung Choi

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit semiconductor device includes a plurality of cylindrical structures separated from each other on a substrate; and a plurality of supporters having an opening region exposing side surfaces of the plurality of cylindrical structures, the plurality of supporters being in contact with the side surfaces of the plurality of cylindrical structures and supporting the plurality of cylindrical structures, wherein each of the plurality of supporters has both side surfaces having slopes and has a top width that is less than a bottom width.

公开(公告)号：US12250605B2

公开(公告)日：2025-03-11

申请号：US17776505

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyun Je ,  Byunghyun Lee ,  Jungsoo Jung ,  Byounghoon Jung

IPC: H04W24/02 ,  H04W24/10 ,  H04W36/00 ,  H04W36/24 ,  H04W36/30 ,  H04W84/02 ,  H04W88/02 ,  H04W88/08 ,  H04W92/02 ,  H04W92/10

Abstract: The present disclosure relates to a 5G or 6G communication system supporting higher data transmission rates than 4G systems such as LTE systems. The present invention of the present disclosure pertains to a method for handing over a terminal in a wireless communication system, wherein the method is characterized by: receiving handover control reference information from a base station; determining whether to perform a handover on the basis of the handover control reference information and wireless signal information acquired through the measurement of a wireless signal; and transmitting a handover request message to the base station when it is determined that handover is to be performed.

公开(公告)号：US11152368B2

公开(公告)日：2021-10-19

申请号：US16908833

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonyoung Choi ,  Byunghyun Lee ,  Seungjin Kim ,  Byeongjoo Ku ,  Sangjae Park ,  Hangeol Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.