公开(公告)号：US20200313101A1

公开(公告)日：2020-10-01

申请号：US16718956

申请日：2019-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Younjae Jung ,  Jongwoo Park ,  Taeyoung Kim ,  Hyojung Kim ,  Kiju Im ,  Hyuncheol Hwang

IPC: H01L51/00 ,  H01L51/52 ,  H01L27/32

Abstract: A display panel includes: a plurality of display elements arranged in a display area around an opening, each of the display elements including a pixel electrode, an emission layer above the pixel electrode, and an opposite electrode above the emission layer; and a groove between the opening and the display area, wherein the groove includes a first recessed portion having a first width in a first layer, and a second recessed portion in a second layer on the first layer and having a second width greater than the first width, and a side surface of the groove includes steps.

公开(公告)号：US20170110528A1

公开(公告)日：2017-04-20

申请号：US15199469

申请日：2016-06-30

Applicant: Samsung Display Co., Ltd.,

Inventor： Eunhyun Kim ,  Taeyoung Kim ,  Hyehyang Park ,  Shinhyuk Yang

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.

公开(公告)号：US12016203B2

公开(公告)日：2024-06-18

申请号：US17140660

申请日：2021-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Junehwan Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Kiju Im ,  Hyuncheol Hwang

IPC: H10K59/12 ,  G09G3/3233 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K59/121 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/12 ,  G09G3/3233 ,  G09G2320/0233 ,  H01L29/1054 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2924/13069 ,  H10K10/464 ,  H10K59/1213 ,  H10K59/35 ,  H10K77/111 ,  H10K2102/311

Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

公开(公告)号：US20230230545A1

公开(公告)日：2023-07-20

申请号：US18094926

申请日：2023-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehwan Kim ,  Yoonho Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Daeyoun Cho

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/08 ,  G09G2300/0861 ,  G09G2320/0626 ,  G09G2310/0262

Abstract: A pixel includes: a first driving transistor and a second driving transistor; a first select transistor connected between a gate of the first driving transistor and a gate node; and a second select transistor connected between a gate of the second driving transistor and the gate node.

公开(公告)号：US20230085460A1

公开(公告)日：2023-03-16

申请号：US17703176

申请日：2022-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kiju Im ,  Jongwoo Park ,  Hyeokjae Kwon ,  Yoonho Kim ,  Jongyeob Kim ,  Junehwan Kim ,  Taeyoung Kim ,  Hyuncheol Hwang

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a display panel and a metal plate disposed under the display panel, where the metal plate includes a first area and a second area which is adjacent to the first area, and a plurality of through holes is defined through the metal plate. The plurality of through holes includes a first through hole and a second through hole, which are spaced apart from each other at a first interval in the first area, and a third through hole and a fourth through hole, which are spaced apart from each other at a second interval in the second area, and the first interval is different from the second interval.

公开(公告)号：US10553660B2

公开(公告)日：2020-02-04

申请号：US16174486

申请日：2018-10-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Taeyoung Kim ,  Heejin Kim ,  Jongwoo Park ,  Daeyoun Cho

IPC: H01L51/52 ,  H01L27/32 ,  H01L33/38

Abstract: An organic light emitting display (OLED) device includes a substrate having a display region including a plurality of sub-pixel regions, a respective driving transistor and a respective switching transistor on the substrate in each of the sub-pixel regions, an insulation layer structure on the substrate, the insulation layer structure having a respective trench surrounding the driving transistor in each of the sub-pixel regions, and a respective sub-pixel structure on the insulation layer structure in each of the sub-pixel regions.

公开(公告)号：US20230165071A1

公开(公告)日：2023-05-25

申请号：US17991866

申请日：2022-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyojung Kim ,  Sangsub Kim ,  Jongwoo Park ,  Junehwan Kim ,  Taeyoung Kim ,  Youngtae Choi ,  Hyuncheol Hwang

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L27/3274 ,  H01L51/0037 ,  H01L51/56 ,  H01L51/0094 ,  H01L51/0512 ,  H01L2227/323

Abstract: The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.

公开(公告)号：US20210335926A1

公开(公告)日：2021-10-28

申请号：US17140660

申请日：2021-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Junehwan Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Kiju Im ,  Hyuncheol Hwang

IPC: H01L27/32

Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

公开(公告)号：US10950678B2

公开(公告)日：2021-03-16

申请号：US15199469

申请日：2016-06-30

Applicant: Samsung Display Co., Ltd.

Inventor： Eunhyun Kim ,  Taeyoung Kim ,  Hyehyang Park ,  Shinhyuk Yang

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

Abstract: A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.

公开(公告)号：US11996045B2

公开(公告)日：2024-05-28

申请号：US18094926

申请日：2023-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehwan Kim ,  Yoonho Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Daeyoun Cho

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2310/08 ,  G09G2320/0626

Abstract: A pixel includes: a first driving transistor and a second driving transistor; a first select transistor connected between a gate of the first driving transistor and a gate node; and a second select transistor connected between a gate of the second driving transistor and the gate node.